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SN74172N-00

Texas Instruments

SN74172N-00 by Texas Instruments

SN74172N-00 by Texas Instruments is a 16-bit MULTI-PORT SRAM with 8x2 organization, operating at 5V. It features a synchronous mode, 3-STATE output characteristics, and operates in commercial temperature grade. This TTL technology memory IC is ideal for parallel applications requiring high-speed data storage and retrieval.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,316 parts In-Stock

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2,316

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Digiode

USA . 453 parts In-Stock

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453

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,118 parts In-Stock

1+ parts

$4.900

100+ parts

-

1k+ parts

$5.432

10k+ parts

-

2,118

$4.900

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$5.432

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DigiPath Technology Company

USA . 2,223 parts In-Stock

1+ parts

$5.396

100+ parts

$4.964

1k+ parts

-

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2,223

$5.396

$4.964

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ChromeModa Solutions

Germany . 5,540 parts In-Stock

1+ parts

$5.506

100+ parts

$4.515

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-

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5,540

$5.506

$4.515

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IDEA Electronic Components Group

UK . 1,543 parts In-Stock

1+ parts

$5.506

100+ parts

-

1k+ parts

$4.955

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1,543

$5.506

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$4.955

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One Stop Electronics

USA . 1,299 parts In-Stock

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$17.000

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1,299

$17.000

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AZTECH Wire

Italy . 564 parts In-Stock

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$18.218

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564

$18.218

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Corphita

USA . 2,407 parts In-Stock

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2,407

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Overview

Experience unparalleled performance and reliability with the SN74172N-00 by Texas Instruments, a leading manufacturer known for producing high-quality SRAM products. This versatile multi-port SRAM offers customers a seamless synchronous operating mode with 3-state output characteristics, making it ideal for a wide range of applications. From data storage to buffering, this innovative memory IC provides exceptional value and benefits, ensuring optimal functionality and efficiency in every use case. Trust Texas Instruments to deliver cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and reliability for the SRAM, ensuring long-lasting performance.

Operating Mode: SYNCHRONOUS

The synchronous operating mode allows for precise timing and coordination of data transfers, enhancing the efficiency and speed of the SRAM.

Nominal Supply Voltage / Vsup (V): 5

The 5V nominal supply voltage ensures compatibility with standard power sources, making it easy to integrate into various systems.

No. of Terminals: 24

The 24 terminals provide ample connectivity options, allowing for versatile configurations and ease of integration.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this SRAM can perform reliably even under demanding environmental conditions.

Technology: TTL

The TTL technology used in this SRAM ensures high-speed and efficient data processing, making it suitable for applications requiring fast performance.

Technical Specifications

SRAM SN74172N-00 attributes and parameters. Explore more SRAM devices from Texas Instruments

Specs

JESD-30 Code:

R-PDIP-T24

Length:

31.75 mm

Memory Density:

16 bit

Memory IC Type:

Memory Width:

2

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

24

No. of Words:

8 words

No. of Words Code:

8

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

8X2

Output Characteristics:

3-STATE

Output Enable:

NO

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

15.24 mm

Trade Compliance

SN74172N-00 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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