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SN74172N-10

Texas Instruments

SN74172N-10 by Texas Instruments

SN74172N-10 by Texas Instruments is a 16-bit MULTI-PORT SRAM with 8x2 organization, operating at 5V. It features SYNCHRONOUS mode, 3-STATE output, and operates in COMMERCIAL temperature range. Ideal for applications requiring fast parallel memory access in TTL technology.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,152 parts In-Stock

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3,152

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Vyrian

USA . 2,809 parts In-Stock

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2,809

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 671 parts In-Stock

1+ parts

$3.050

100+ parts

-

1k+ parts

$3.564

10k+ parts

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671

$3.050

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$3.564

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DigiPath Technology Company

USA . 580 parts In-Stock

1+ parts

$3.358

100+ parts

$3.090

1k+ parts

-

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580

$3.358

$3.090

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ChromeModa Solutions

Germany . 3,283 parts In-Stock

1+ parts

$3.427

100+ parts

$2.810

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3,283

$3.427

$2.810

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IDEA Electronic Components Group

UK . 2,197 parts In-Stock

1+ parts

$3.427

100+ parts

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1k+ parts

$3.084

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2,197

$3.427

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$3.084

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AZTECH Wire

Italy . 534 parts In-Stock

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$9.481

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534

$9.481

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One Stop Electronics

USA . 191 parts In-Stock

1+ parts

$23.000

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191

$23.000

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Corphita

USA . 3,276 parts In-Stock

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Overview

Experience unmatched quality and reliability with the SN74172N-10 by Texas Instruments, a leading manufacturer in the industry. This multi-port SRAM offers seamless synchronous operation and 3-STATE output characteristics, making it ideal for a wide range of applications. From industrial automation to telecommunications, this innovative product provides exceptional value and performance, ensuring optimal functionality and efficiency for your projects. Trust Texas Instruments for cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a reliable performance over time.

Operating Mode: SYNCHRONOUS

Enables efficient and synchronized data transfer, enhancing the overall performance of the device.

Nominal Supply Voltage / Vsup (V): 5

Standard voltage requirement that is widely compatible with various systems and components.

No. of Terminals: 24

Sufficient number of terminals for connectivity and data exchange, offering versatility in usage.

Package Style (Meter): IN-LINE

Compact and space-saving design that can easily fit into different setups or applications.

Maximum Operating Temperature: 70 °C

Can withstand high temperatures without compromising performance, ensuring reliability in diverse environments.

Organization: 8X2

Efficient organization of memory cells for optimized data storage and retrieval processes.

Output Characteristics: 3-STATE

Allows for multiple output states, providing flexibility in managing data flow within the system.

Minimum Operating Temperature: 0 °C

Capable of functioning in low-temperature conditions, making it suitable for a wide range of operating environments.

No. of Ports: 2

Dual ports enable simultaneous data access and transfer, improving overall system efficiency.

Width: 15.24 mm

Compact width dimension for easy integration into various electronic devices or circuit boards.

Technology: TTL

Utilizes TTL technology for reliable and accurate data processing, ensuring minimal errors in data transmission.

Parallel or Serial: PARALLEL

Parallel data transfer architecture for faster and more efficient communication between components.

No. of Words: 8 words

Offers ample storage capacity for data manipulation and processing tasks.

Memory Width: 2

Efficient memory width configuration for optimized data handling and storage capabilities.

Maximum Supply Voltage (Vsup): 5.25 V

Safe operating voltage range that prevents damage to the device during power fluctuations.

Memory Density: 16 bit

High memory density for storing and accessing a large amount of data efficiently.

Memory IC Type: MULTI-PORT SRAM

Multi-port design allows for simultaneous data access from multiple sources, enhancing overall system performance.

Technical Specifications

SRAM SN74172N-10 attributes and parameters. Explore more SRAM devices from Texas Instruments

Specs

JESD-30 Code:

R-PDIP-T24

Length:

31.75 mm

Memory Density:

16 bit

Memory IC Type:

Memory Width:

2

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

24

No. of Words:

8 words

No. of Words Code:

8

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

8X2

Output Characteristics:

3-STATE

Output Enable:

NO

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

15.24 mm

Trade Compliance

SN74172N-10 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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