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SN7481AJ-00

Texas Instruments

SN7481AJ-00 by Texas Instruments

SN7481AJ-00 by Texas Instruments is a 16x1 standard SRAM with 16-bit memory density. It operates asynchronously at a nominal voltage of 5V, with open-collector output characteristics. This TTL technology IC has a max access time of 28ns and is commonly used in commercial applications requiring fast parallel memory storage.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,702 parts In-Stock

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Digiode

USA . 2,937 parts In-Stock

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Distributors (Availability)

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One Stop Electronics

USA . 1,608 parts In-Stock

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$3.000

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$3.000

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Parana Technologies

USA . 1,202 parts In-Stock

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$4.880

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$5.408

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$4.880

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$5.408

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ChromeModa Solutions

Germany . 5,827 parts In-Stock

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$5.483

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$4.496

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5,827

$5.483

$4.496

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IDEA Electronic Components Group

UK . 884 parts In-Stock

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$5.483

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$4.935

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884

$5.483

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$4.935

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AZTECH Wire

Italy . 852 parts In-Stock

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$15.464

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$15.464

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Corphita

USA . 2,113 parts In-Stock

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DigiPath Technology Company

USA . 240 parts In-Stock

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$4.943

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Overview

Enhance your electronic projects with the SN7481AJ-00 from Texas Instruments, a leading manufacturer known for quality and reliability. This SRAM device offers fast access times and low power consumption, making it ideal for a wide range of applications in consumer electronics, industrial automation, and more. Trust in the value and benefits of this product to bring efficiency and performance to your designs. Elevate your projects with the superior functionality of the SN7481AJ-00.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic, glass-sealed package body material ensures durability and protection for the internal components of the SRAM, making it suitable for rugged environments.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for fast and efficient operations without the need for synchronization signals, providing seamless communication within the system.

Nominal Supply Voltage / Vsup (V): 5

The 5V nominal supply voltage ensures compatibility with standard power sources, making it easy to integrate into existing systems.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this SRAM can function reliably in a wide range of environmental conditions, ensuring consistent performance.

Memory Density: 16 bit

The 16-bit memory density provides ample storage capacity for data processing, making this SRAM suitable for applications that require moderate memory usage.

Technical Specifications

SRAM SN7481AJ-00 attributes and parameters. Explore more SRAM devices from Texas Instruments

Specs

Maximum Access Time:

28 ns

JESD-30 Code:

R-GDIP-T14

Length:

19.56 mm

Memory Density:

16 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

14

No. of Words:

16 words

No. of Words Code:

16

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

16X1

Output Characteristics:

OPEN-COLLECTOR

Output Enable:

NO

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Trade Compliance

SN7481AJ-00 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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