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SN74172N3

Texas Instruments

SN74172N3 by Texas Instruments

SN74172N3 by Texas Instruments is an 8x2 standard SRAM with 3-STATE output, operating in asynchronous mode. It features a rectangular plastic/epoxy package with 24 terminals and operates b/w 0°C to 70°C. Ideal for parallel memory applications due to its TTL technology and through-hole terminal form.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,454 parts In-Stock

1+ parts

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4,454

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Vyrian

USA . 2,704 parts In-Stock

1+ parts

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2,704

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,177 parts In-Stock

1+ parts

$5.255

100+ parts

-

1k+ parts

$5.875

10k+ parts

-

1,177

$5.255

-

$5.875

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DigiPath Technology Company

USA . 394 parts In-Stock

1+ parts

$5.786

100+ parts

$5.323

1k+ parts

-

10k+ parts

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394

$5.786

$5.323

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ChromeModa Solutions

Germany . 4,843 parts In-Stock

1+ parts

$5.904

100+ parts

$4.841

1k+ parts

-

10k+ parts

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4,843

$5.904

$4.841

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IDEA Electronic Components Group

UK . 730 parts In-Stock

1+ parts

$5.904

100+ parts

-

1k+ parts

$5.314

10k+ parts

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730

$5.904

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$5.314

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AZTECH Wire

Italy . 810 parts In-Stock

1+ parts

$16.725

100+ parts

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810

$16.725

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One Stop Electronics

USA . 191 parts In-Stock

1+ parts

$21.000

100+ parts

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191

$21.000

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Corphita

USA . 4,475 parts In-Stock

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4,475

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Overview

Elevate your electronics with the SN74172N3 by Texas Instruments, a top-tier SRAM memory IC designed for optimal performance and reliability. With Texas Instruments at the helm, you can trust in the highest quality and cutting-edge technology. Whether you're upgrading a computer system or enhancing a digital device, this product offers seamless operation and efficient data storage. Experience the value and benefits of Texas Instruments' superior craftsmanship with the SN74172N3, your go-to solution for all memory needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic material ensures durability and resistance to damage, making the product suitable for various environments.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent and flexible data transfer, enhancing the overall performance of the product.

Technology: TTL

TTL technology provides reliable and fast data processing, improving the efficiency of the product.

Parallel or Serial: PARALLEL

Parallel data transfer allows for faster transmission and processing of information, making the product ideal for high-speed applications.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature, the product can perform consistently even in challenging conditions.

Technical Specifications

SRAM SN74172N3 attributes and parameters. Explore more SRAM devices from Texas Instruments

Specs

JESD-30 Code:

R-PDIP-T24

Memory IC Type:

Memory Width:

2

No. of Terminals:

24

No. of Words:

8 words

No. of Words Code:

8

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

8X2

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Sub-Category:

SRAMs

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

SN74172N3 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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