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5962-8855201XA

Renesas Electronics

5962-8855201XA by Renesas Electronics

Renesas Electronics' 5962-8855201XA is a MIL-STD-883 compliant SRAM with 32KX8 organization, 100 ns access time, and 262144 bit memory density. It operates at -55 to 125 °C and has a max supply voltage of 5.5 V. Ideal for military applications requiring reliable, high-speed memory performance.

Median Price

$288.100

Lifecycle Status

EOL

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Arrow

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$163.520

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Verical

USA . 25 parts In-Stock

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Nova Conductors

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$36.618

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VNN

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Aztec Data Supply Inc.

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$2.930

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Continental Prestige Electronics

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$35.827

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Netroflash

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Microchip USA

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Semicontronic

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$244.890

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Ampacity Inc.

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Argo Parts USA

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Overview

Upgrade your system with the reliable 5962-8855201XA SRAM by Renesas Electronics. With a MIL-STD-883 screening level and a ceramic, glass-sealed package, this memory chip ensures top-notch quality and durability. Ideal for military-grade applications, this SRAM offers fast access times and low power consumption. Trust Renesas Electronics to provide you with cutting-edge technology that guarantees optimal performance for your devices. Elevate your projects with the unmatched value and benefits of this high-quality SRAM solution.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic, glass-sealed package body material ensures durability and reliability, making this product suitable for harsh environments.

Screening Level: MIL-STD-883

Compliance with MIL-STD-883 screening level standards ensures high quality and reliability in military applications.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for independent and flexible access to data, enhancing overall performance and speed.

Nominal Supply Voltage / Vsup (V): 5

Operates at a stable nominal supply voltage of 5V for consistent performance.

Memory Width: 8

With a memory width of 8 bits, this product can efficiently handle data processing tasks.

Technical Specifications

SRAM 5962-8855201XA attributes and parameters. Explore more SRAM devices from Renesas Electronics

Specs

Maximum Access Time:

100 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-GDIP-T28

JESD-609 Code:

e0

Length:

37.211 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

28

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

32KX8

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

240

Power Supplies (V):

5

Qualification:

Qualified

Screening Level:

MIL-STD-883

Maximum Seated Height:

5.08 mm

Maximum Standby Current:

.0008 Amp

Minimum Standby Voltage:

2 V

Sub-Category:

SRAMs

Maximum Supply Current:

100 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

15.24 mm

Trade Compliance

5962-8855201XA Memory ICs trade compliance attributes, and parameters.

ECCN

3A001.A.2.C

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

PCN

Manufacturer Highlights

Renesas Electronics

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