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IDT7130LA100CB

Renesas Electronics

IDT7130LA100CB by Renesas Electronics

The Renesas Electronics IDT7130LA100CB is a MIL-PRF-38535 screened SRAM with 1KX8 organization, operating at 5V. It features an asynchronous mode, 3-STATE output characteristics, and common I/O type. Ideal for military applications due to its ceramic-metal package and wide temperature range of -55 to 125°C.

Median Price

$100.000

Lifecycle Status

EOL

Suppliers In-Stock

8

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< 1k

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NAC Semi

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Nova Conductors

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Vyrian

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Corel Iberica Componentes, S.L.

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Sinequanon

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Manoshevitz Elec. Sales

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North Shore Components

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AZTECH Wire

Italy . 295 parts In-Stock

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Ampacity Inc.

Singapore . 396 parts In-Stock

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Continental Prestige Electronics

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Glotronic Ltd.

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Argo Parts USA

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Overview

Experience unparalleled performance and reliability with the Renesas Electronics IDT7130LA100CB SRAM. Renowned for their superior quality and cutting-edge technology, Renesas Electronics delivers a product that exceeds expectations. Ideal for military-grade applications, this multi-port SRAM offers unmatched speed and efficiency. Elevate your projects with the IDT7130LA100CB and enjoy seamless operation and enhanced functionality. Join the ranks of satisfied customers who trust Renesas Electronics for top-notch solutions.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material provides durability and protection, making the product suitable for harsh environments.

Screening Level: MIL-PRF-38535

MIL-PRF-38535 screening ensures that the product meets strict military standards for reliability and performance.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard 5V supply voltage ensures compatibility with a wide range of systems.

No. of Terminals: 48

Having 48 terminals allows for versatile connectivity options and integration into different setups.

Organization: 1KX8

Organized as 1Kx8, this product offers a good balance between memory capacity and data width for efficient performance.

Maximum Operating Temperature: 125 °C

The wide operating temperature range up to 125°C ensures reliable operation even in high-temperature environments.

Memory Density: 8192 bit

With a memory density of 8192 bits, this product provides ample storage capacity for data-intensive applications.

Technical Specifications

SRAM IDT7130LA100CB attributes and parameters. Explore more SRAM devices from Renesas Electronics

Specs

Maximum Access Time:

100 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-CDIP-T48

JESD-609 Code:

e0

Length:

60.96 mm

Memory Density:

8192 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

48

No. of Words:

1024 words

No. of Words Code:

1K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

1KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

DIP

Package Equivalence Code:

DIP48,.6

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

240

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

MIL-PRF-38535

Maximum Seated Height:

4.826 mm

Maximum Standby Current:

.004 Amp

Minimum Standby Voltage:

2 V

Sub-Category:

SRAMs

Maximum Supply Current:

140 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

20

Width:

15.24 mm

Trade Compliance

IDT7130LA100CB Memory ICs trade compliance attributes, and parameters.

ECCN

3A001.A.2.C

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

NSN

5962-01-317-3180, 5962013173180

NIIN

013173180

Manufacturer Highlights

Renesas Electronics

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