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N02L1618C1AB-70I

Onsemi

N02L1618C1AB-70I by Onsemi

N02L1618C1AB-70I by Onsemi is a 128KX16 SRAM with 3-STATE output, operating at 1.8V, suitable for industrial applications. It features a low profile grid array package with 0.75mm terminal pitch and offers fast access time of 70ns. Ideal for high-speed parallel memory applications requiring reliable performance in harsh environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,319 parts In-Stock

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Vyrian

USA . 808 parts In-Stock

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SupplyDigital Components

Austria . 7,718 parts In-Stock

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Problanco Electronics

Mexico . 7,077 parts In-Stock

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Kulean Microsystems

USA . 2,961 parts In-Stock

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Corphita

USA . 1,346 parts In-Stock

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TANS Electronics

Latvia . 1,060 parts In-Stock

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Corohmni

South Africa . 272 parts In-Stock

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UHIMA Technologies

Türkiye . 48 parts In-Stock

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Overview

Boost your electronic devices with the N02L1618C1AB-70I by Onsemi, a top-of-the-line SRAM memory chip that delivers unparalleled performance and reliability. Manufactured by Onsemi, a trusted leader in semiconductor technology, this memory chip is perfect for a wide range of applications. With its low profile and fine pitch package style, this memory chip offers customers a compact and efficient solution for their electronic needs. Upgrade your devices today with the N02L1618C1AB-70I and experience the superior quality and benefits that Onsemi products are known for.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the SRAM, ensuring it can withstand various environmental conditions.

Surface Mount: YES

Enables easy and efficient installation onto circuit boards, saving time and effort during production.

Nominal Supply Voltage / Vsup (V): 1.8

Optimal voltage for efficient operation, ensuring stable performance and power consumption.

Maximum Operating Temperature: 85 °C

Suitable for industrial environments where higher temperatures may be present, increasing the versatility of the SRAM.

Organization: 128KX16

Provides a good balance between storage capacity and data access speed in parallel operation.

Technology: CMOS

Utilizes low power consumption and offers high noise immunity, enhancing the overall reliability of the SRAM.

Maximum Access Time: 70 ns

Ensures fast read and write operations, making the SRAM suitable for applications that require quick data processing.

Technical Specifications

SRAM N02L1618C1AB-70I attributes and parameters. Explore more SRAM devices from Onsemi

Specs

Maximum Access Time:

70 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PBGA-B48

JESD-609 Code:

e0

Length:

8 mm

Memory Density:

2097152 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

48

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA48,6X8,30

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Power Supplies (V):

1.8/2

Qualification:

Not Qualified

Maximum Seated Height:

1.34 mm

Maximum Standby Current:

.00001 Amp

Minimum Standby Voltage:

1.2 V

Sub-Category:

SRAMs

Maximum Supply Current:

3 mA

Maximum Supply Voltage (Vsup):

2.2 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Width:

6 mm

Trade Compliance

N02L1618C1AB-70I Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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