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IDT71V416S10PHG8

Renesas Electronics

IDT71V416S10PHG8 by Renesas Electronics

The Renesas Electronics IDT71V416S10PHG8 is a 256Kx16 SRAM with 10ns access time, operating at 3.3V. It features a small outline package and common I/O type, suitable for commercial temperature grade applications. With 44 terminals and GULL WING form factor, it offers high-speed parallel memory access in various electronic devices.

Median Price

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Lifecycle Status

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5

In-Stock Inventory

1k+

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Vyrian

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Chip Stock

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ECAB

Sweden . 25 parts In-Stock

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Nova Conductors

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Corohmni

South Africa . 97 parts In-Stock

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$2.009

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AZTECH Wire

Italy . 305 parts In-Stock

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Ampacity Inc.

Singapore . 544 parts In-Stock

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$18.000

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Semicontronic

India . 716 parts In-Stock

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$24.000

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$23.400

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$23.280

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Perfect Parts

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Argo Parts USA

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Continental Prestige Electronics

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Overview

Experience the unmatched quality and reliability of Renesas Electronics with the IDT71V416S10PHG8 SRAM. This versatile memory IC is the perfect solution for a wide range of applications, offering fast access times and low power consumption. With a compact design and easy surface mount installation, this product provides exceptional performance in a variety of environments. Trust Renesas Electronics to deliver cutting-edge technology that exceeds your expectations and enhances the functionality of your electronic devices. Upgrade to the IDT71V416S10PHG8 today and unlock a world of possibilities!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Surface Mount: YES

Easy to integrate into circuit boards, saving space and making installation more efficient.

Operating Mode: ASYNCHRONOUS

Allows for independent operation of each memory cell, improving overall performance and flexibility.

Nominal Supply Voltage / Vsup (V): 3.3

Efficiently operates at a common voltage level, making it compatible with a wide range of systems and devices.

Memory Density: 4194304 bit

Provides ample storage capacity for data-intensive applications, enhancing the product's overall functionality.

Maximum Access Time: 10 ns

Delivers fast access speeds, ensuring quick retrieval of information and optimal performance.

Technical Specifications

SRAM IDT71V416S10PHG8 attributes and parameters. Explore more SRAM devices from Renesas Electronics

Specs

Maximum Access Time:

10 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G44

JESD-609 Code:

e3

Length:

18.41 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

44

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256KX16

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP44,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.02 Amp

Minimum Standby Voltage:

3 V

Sub-Category:

SRAMs

Maximum Supply Current:

200 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10.16 mm

Trade Compliance

IDT71V416S10PHG8 Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Renesas Electronics

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