Loading...

N02L083WC2AN-55I

Onsemi

N02L083WC2AN-55I by Onsemi

N02L083WC2AN-55I by Onsemi is a 256Kx8 SRAM with 55ns access time, operating at 3V. It features a small outline package and operates in industrial temperature range. Ideal for applications requiring fast and reliable memory storage in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,044 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,044

-

-

-

-

Vyrian

USA . 1,901 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,901

-

-

-

-

Q Components

USA . 700 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

700

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Kulean Microsystems

USA . 7,991 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,991

-

-

-

-

Problanco Electronics

Mexico . 6,932 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,932

-

-

-

-

TANS Electronics

Latvia . 5,357 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,357

-

-

-

-

Authorized Procurement Solutions

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,000

-

-

-

-

Kepictronics

USA . 1,994 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,994

-

-

-

-

Corphita

USA . 1,825 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,825

-

-

-

-

SupplyDigital Components

Austria . 833 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

833

-

-

-

-

UHIMA Technologies

Türkiye . 730 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

730

-

-

-

-

Corohmni

South Africa . 192 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

192

-

-

-

-

Overview

Experience unparalleled performance and reliability with the N02L083WC2AN-55I by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality products like this SRAM memory chip, perfect for a wide range of applications. With its common input/output type and 3-state output characteristics, this memory chip offers seamless integration and efficient operation. Trust in Onsemi's expertise and choose the N02L083WC2AN-55I for your next project to unlock superior performance and maximize value for your customers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for portable or rugged applications.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and effort during manufacturing.

Operating Mode: ASYNCHRONOUS

The asynchronous operation mode provides flexibility and ease of use in different system architectures.

Nominal Supply Voltage / Vsup (V): 3

Operating at a nominal supply voltage of 3V ensures compatibility with a wide range of systems and power sources.

Technology: CMOS

The CMOS technology offers low power consumption and fast switching speeds, contributing to energy efficiency and high performance.

Maximum Access Time: 55 ns

The fast access time of 55 ns enables quick data retrieval and processing, enhancing overall system speed and responsiveness.

Technical Specifications

SRAM N02L083WC2AN-55I attributes and parameters. Explore more SRAM devices from Onsemi

Specs

Maximum Access Time:

55 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G32

JESD-609 Code:

e0

Length:

11.8 mm

Memory Density:

2097152 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

32

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP32,.56,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Parallel or Serial:

PARALLEL

Power Supplies (V):

3/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.25 mm

Maximum Standby Current:

.00001 Amp

Minimum Standby Voltage:

1.8 V

Sub-Category:

SRAMs

Maximum Supply Current:

16 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

8 mm

Trade Compliance

N02L083WC2AN-55I Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20