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N02L083WC2AT-70I

Onsemi

N02L083WC2AT-70I by Onsemi

N02L083WC2AT-70I by Onsemi is a 256Kx8 SRAM with 70ns access time, operating at 3.6V max supply voltage. It features asynchronous mode, 3-state output, and industrial temperature grade. Ideal for applications requiring fast memory access in harsh environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,057 parts In-Stock

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Digiode

USA . 588 parts In-Stock

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Problanco Electronics

Mexico . 7,933 parts In-Stock

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SupplyDigital Components

Austria . 6,645 parts In-Stock

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TANS Electronics

Latvia . 3,911 parts In-Stock

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Corphita

USA . 947 parts In-Stock

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Corohmni

South Africa . 391 parts In-Stock

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UHIMA Technologies

Türkiye . 227 parts In-Stock

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Kulean Microsystems

USA . 89 parts In-Stock

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Overview

Enhance your electronic devices with the N02L083WC2AT-70I SRAM by Onsemi. Designed with precision and reliability in mind, Onsemi's products are known for their superior quality and performance. This small outline, thin profile memory chip operates asynchronously with common input/output type, making it ideal for a wide range of industrial applications. With a 256Kx8 organization and fast access time of 70 ns, this SRAM offers customers unparalleled speed and efficiency. Upgrade your systems today with the trusted technology of Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the SRAM, ensuring long-term reliability.

Surface Mount: YES

Allows for easy and secure installation on circuit boards, saving space and simplifying assembly.

Operating Mode: ASYNCHRONOUS

Offers flexibility in data transfer timing and control, making it suitable for various applications.

Nominal Supply Voltage / Vsup (V): 3

Compatible with standard voltage requirements, ensuring compatibility with a wide range of systems.

Memory IC Type: STANDARD SRAM

Reliable and widely used memory technology for fast and efficient data storage and retrieval.

Technical Specifications

SRAM N02L083WC2AT-70I attributes and parameters. Explore more SRAM devices from Onsemi

Specs

Maximum Access Time:

70 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G32

JESD-609 Code:

e0

Length:

18.4 mm

Memory Density:

2097152 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

32

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP32,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Power Supplies (V):

2.5/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.25 mm

Maximum Standby Current:

.00001 Amp

Minimum Standby Voltage:

1.8 V

Sub-Category:

SRAMs

Maximum Supply Current:

16 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

8 mm

Trade Compliance

N02L083WC2AT-70I Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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