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N02L63W3AB25IT

Onsemi

N02L63W3AB25IT by Onsemi

Onsemi's N02L63W3AB25IT is a 128KX16 SRAM with 3-STATE output, operating at 2.5/3.3V. It features a low profile grid array package suitable for industrial applications, offering fast access time of 70ns and memory density of 2097152 bits.

Median Price

$2.164

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

$2.040

1k+ parts

$1.830

10k+ parts

$1.720

2,500

-

$2.040

$1.830

$1.720

Verical

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$2.288

10k+ parts

-

2,500

-

-

$2.288

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,809 parts In-Stock

1+ parts

$2.166

100+ parts

-

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1,809

$2.166

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Vyrian

USA . 6,957 parts In-Stock

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6,957

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DigiKey Marketplace

USA . 2,500 parts In-Stock

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-

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2,500

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,621 parts In-Stock

1+ parts

$2.052

100+ parts

-

1k+ parts

-

10k+ parts

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1,621

$2.052

-

-

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Corohmni

South Africa . 210 parts In-Stock

1+ parts

$2.280

100+ parts

-

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210

$2.280

-

-

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AZTECH Wire

Italy . 473 parts In-Stock

1+ parts

$17.590

100+ parts

-

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473

$17.590

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SupplyDigital Components

Austria . 7,780 parts In-Stock

1+ parts

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7,780

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-

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TANS Electronics

Latvia . 6,505 parts In-Stock

1+ parts

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6,505

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Microchip USA

USA . 5,576 parts In-Stock

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5,576

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Kulean Microsystems

USA . 3,018 parts In-Stock

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3,018

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Problanco Electronics

Mexico . 2,488 parts In-Stock

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2,488

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UHIMA Technologies

Türkiye . 629 parts In-Stock

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629

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Overview

Experience the superior quality and reliability of Onsemi's N02L63W3AB25IT SRAM memory chip. This cutting-edge product offers unmatched performance in a wide range of applications, from industrial automation to telecommunications. With a nominal supply voltage of 3V and power supplies of 2.5/3.3V, this memory chip provides fast access time and low standby current. Trust in Onsemi's expertise and innovation to bring you the best in memory technology, delivering value and efficiency to your projects. Upgrade to the N02L63W3AB25IT today and experience seamless operation and enhanced performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body provides durability and protection to the SRAM, ensuring a longer lifespan.

Nominal Supply Voltage / Vsup (V): 3

The SRAM operates at a nominal supply voltage of 3V, making it compatible with a wide range of systems and applications.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85 °C, this SRAM can withstand harsh environmental conditions and extended use.

Memory IC Type: STANDARD SRAM

Being a standard SRAM memory IC, this product offers reliable performance and compatibility with existing systems and designs.

Maximum Access Time: 70 ns

The maximum access time of 70 nanoseconds ensures quick and efficient read/write operations, making this SRAM ideal for high-speed applications.

Technical Specifications

SRAM N02L63W3AB25IT attributes and parameters. Explore more SRAM devices from Onsemi

Specs

Maximum Access Time:

70 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PBGA-B48

Length:

8 mm

Memory Density:

2097152 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

48

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA48,6X8,30

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Power Supplies (V):

2.5/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.34 mm

Maximum Standby Current:

.00001 Amp

Minimum Standby Voltage:

1.8 V

Sub-Category:

SRAMs

Maximum Supply Current:

16 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Width:

6 mm

Trade Compliance

N02L63W3AB25IT Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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