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N64S818HAT21I

Onsemi

N64S818HAT21I by Onsemi

N64S818HAT21I by Onsemi is an 8KX8 SRAM with 16 MHz clock frequency, 1.8V supply voltage, and -40 to 85 °C operating temperature range. Ideal for industrial applications requiring fast synchronous memory access in a compact 0.65mm pitch package.

Median Price

$1.598

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 10,450 parts In-Stock

1+ parts

-

100+ parts

$1.420

1k+ parts

$1.180

10k+ parts

$1.050

10,450

-

$1.420

$1.180

$1.050

Verical

USA . 400 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.775

10k+ parts

-

400

-

-

$1.775

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,320 parts In-Stock

1+ parts

$1.102

100+ parts

-

1k+ parts

-

10k+ parts

-

2,320

$1.102

-

-

-

Vyrian

USA . 2,009 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,009

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 509 parts In-Stock

1+ parts

$1.044

100+ parts

-

1k+ parts

-

10k+ parts

-

509

$1.044

-

-

-

Corohmni

South Africa . 257 parts In-Stock

1+ parts

$1.160

100+ parts

-

1k+ parts

-

10k+ parts

-

257

$1.160

-

-

-

Component Stockers USA

USA . 12,947 parts In-Stock

1+ parts

$1.180

100+ parts

$1.110

1k+ parts

$1.000

10k+ parts

$1.000

12,947

$1.180

$1.110

$1.000

$1.000

Microchip USA

USA . 2,651 parts In-Stock

1+ parts

$9.968

100+ parts

-

1k+ parts

-

10k+ parts

-

2,651

$9.968

-

-

-

AZTECH Wire

Italy . 790 parts In-Stock

1+ parts

$14.070

100+ parts

-

1k+ parts

-

10k+ parts

-

790

$14.070

-

-

-

TANS Electronics

Latvia . 6,641 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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6,641

-

-

-

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SupplyDigital Components

Austria . 6,025 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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6,025

-

-

-

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Kulean Microsystems

USA . 2,914 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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2,914

-

-

-

-

UHIMA Technologies

Türkiye . 898 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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898

-

-

-

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Problanco Electronics

Mexico . 490 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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490

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-

-

-

Overview

Experience the unparalleled quality and reliability of the N64S818HAT21I SRAM by Onsemi. As a leading manufacturer in the industry, Onsemi delivers cutting-edge technology that is ideal for a wide range of applications. This small outline, thin profile memory device operates at a clock frequency of up to 16 MHz, providing lightning-fast performance. With a low standby voltage and power consumption, this industrial-grade SRAM offers exceptional value and efficiency. Trust Onsemi to provide you with the innovative solutions you need for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic material is durable and lightweight, making the product suitable for various applications.

Surface Mount: YES

Allows for easy installation and reduces the need for additional components, saving space and cost.

Operating Mode: SYNCHRONOUS

Ensures that data is transferred at a consistent pace, improving overall performance and efficiency of the product.

Nominal Supply Voltage / Vsup (V): 1.8

Optimal supply voltage for efficient operation, ensuring stability and reliability.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, making it suitable for industrial environments where heat may be a concern.

Memory Density: 65536 bit

Offers high memory density, allowing for storage of a large amount of data in a compact form factor.

Technical Specifications

SRAM N64S818HAT21I attributes and parameters. Explore more SRAM devices from Onsemi

Specs

Maximum Clock Frequency (fCLK):

16 MHz

Input/Output Type:

SEPARATE

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.4 mm

Memory Density:

65536 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

1, (3 LINE)

No. of Terminals:

8

No. of Words:

8192 words

No. of Words Code:

8K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Maximum Standby Current:

.0000005 Amp

Minimum Standby Voltage:

1.7 V

Sub-Category:

SRAMs

Maximum Supply Current:

10 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3 mm

Trade Compliance

N64S818HAT21I Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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