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N64S0830HDAS225

Onsemi

N64S0830HDAS225 by Onsemi

N64S0830HDAS225 by Onsemi is an 8KX8 SRAM with 65536 bit memory density. It operates at 3V, has a max access time of 20ns, and uses CMOS technology. Ideal for industrial applications requiring fast and synchronous memory access in a small outline package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,277 parts In-Stock

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Vyrian

USA . 791 parts In-Stock

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791

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TANS Electronics

Latvia . 7,239 parts In-Stock

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7,239

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Problanco Electronics

Mexico . 4,691 parts In-Stock

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Kulean Microsystems

USA . 3,713 parts In-Stock

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SupplyDigital Components

Austria . 1,139 parts In-Stock

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UHIMA Technologies

Türkiye . 728 parts In-Stock

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728

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Corphita

USA . 554 parts In-Stock

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Corohmni

South Africa . 61 parts In-Stock

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Overview

Enhance your electronic devices with the N64S0830HDAS225 by Onsemi, a high-quality SRAM memory chip designed to deliver superior performance and reliability. Manufactured by Onsemi, a trusted leader in the semiconductor industry, this product offers seamless integration and outstanding durability for a wide range of applications. From consumer electronics to industrial automation, this small outline package is perfect for synchronous operating modes with a nominal supply voltage of 3V. Elevate your products with the cutting-edge technology and efficiency of the N64S0830HDAS225, providing customers with the value and benefits they need for their projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a long lifespan for the product.

Surface Mount: YES

Enables easy and convenient installation on circuit boards, saving time and effort during assembly.

Operating Mode: SYNCHRONOUS

Allows for synchronized data transfer, enhancing performance and reliability of the product.

Nominal Supply Voltage / Vsup (V): 3

Runs on a commonly available voltage, making it compatible with a wide range of systems and devices.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, suitable for industrial environments where heat may be a factor.

Memory IC Type: STANDARD SRAM

Utilizes industry-standard SRAM technology, ensuring compatibility and reliability in a variety of applications.

Technical Specifications

SRAM N64S0830HDAS225 attributes and parameters. Explore more SRAM devices from Onsemi

Specs

Maximum Access Time:

20 ns

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3/e4

Length:

4.9 mm

Memory Density:

65536 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

8192 words

No. of Words Code:

8K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN/NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

3.91 mm

Trade Compliance

N64S0830HDAS225 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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