Loading...

N64S0818HDAT220

Onsemi

N64S0818HDAT220 by Onsemi

N64S0818HDAT220 by Onsemi is an 8KX8 SRAM with 1.8V supply voltage, operating at -40 to 85 °C. It features a small outline package with 0.65mm terminal pitch and GULL WING terminals. Ideal for industrial applications requiring fast access time of 25ns in a compact form factor.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,636 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,636

-

-

-

-

Vyrian

USA . 1,070 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,070

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Kulean Microsystems

USA . 8,078 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,078

-

-

-

-

Problanco Electronics

Mexico . 4,975 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,975

-

-

-

-

SupplyDigital Components

Austria . 2,574 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,574

-

-

-

-

Corphita

USA . 1,703 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,703

-

-

-

-

TANS Electronics

Latvia . 1,138 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,138

-

-

-

-

UHIMA Technologies

Türkiye . 935 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

935

-

-

-

-

Corohmni

South Africa . 478 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

478

-

-

-

-

Overview

Boost your electronic devices with the high-quality N64S0818HDAT220 SRAM from Onsemi. Designed for industrial-grade applications, this memory IC offers fast access times and reliable performance in a compact form factor. With a low nominal supply voltage of 1.8V, this synchronous SRAM is perfect for power-efficient designs. Trust Onsemi's expertise in semiconductor manufacturing to deliver a durable and efficient solution for your electronics needs. Elevate your products with the N64S0818HDAT220 and experience the benefits of top-notch technology at an affordable price.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the internal components of the SRAM, making it a reliable choice for long-term use.

Operating Mode: SYNCHRONOUS

The synchronous operation ensures precise and accurate data transfer within the SRAM, increasing its efficiency and performance.

Nominal Supply Voltage: 1.8V

The low supply voltage requirement reduces power consumption, making the SRAM energy-efficient and cost-effective.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature allows the SRAM to operate reliably in harsh environments without compromising its performance.

Technology: CMOS

CMOS technology offers low power consumption and high speed, enhancing the overall performance of the SRAM.

Technical Specifications

SRAM N64S0818HDAT220 attributes and parameters. Explore more SRAM devices from Onsemi

Specs

Maximum Access Time:

25 ns

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3/e4

Length:

4.4 mm

Memory Density:

65536 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

8192 words

No. of Words Code:

8K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN/NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

3 mm

Trade Compliance

N64S0818HDAT220 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20