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N64S0830HDAS2-20I

Onsemi

N64S0830HDAS2-20I by Onsemi

N64S0830HDAS2-20I by Onsemi is an 8Kx8 SRAM with a memory density of 65536 bit. Operating at 3V, it offers synchronous operation and industrial temperature grade suitability. Ideal for applications requiring small outline packages and serial memory technology.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Digiode

USA . 2,066 parts In-Stock

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Vyrian

USA . 993 parts In-Stock

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PC Components Company LLC

USA . 25 parts In-Stock

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Bristol Electronics

USA . 25 parts In-Stock

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TANS Electronics

Latvia . 6,788 parts In-Stock

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Problanco Electronics

Mexico . 4,987 parts In-Stock

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Kulean Microsystems

USA . 2,447 parts In-Stock

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Corphita

USA . 2,082 parts In-Stock

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SupplyDigital Components

Austria . 533 parts In-Stock

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UHIMA Technologies

Türkiye . 520 parts In-Stock

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Corohmni

South Africa . 245 parts In-Stock

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Overview

Experience seamless and reliable data storage with the N64S0830HDAS2-20I by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and performance in their SRAM products. Ideal for industrial applications, this small outline memory IC offers a wide operating temperature range and low power consumption. With 8Kx8 organization and 8192 words, this serial SRAM provides high memory density and fast data access. Trust Onsemi to deliver cutting-edge technology that meets your storage needs efficiently and effectively. Elevate your projects with the N64S0830HDAS2-20I today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material is durable and lightweight, making the product ideal for portable devices.

Surface Mount: YES

Surface mount technology allows for easy and efficient installation on circuit boards.

Nominal Supply Voltage / Vsup (V): 3

Operates at a standard supply voltage, compatible with many electronic systems.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures precise timing and data transfer, improving overall performance.

Memory Density: 65536 bit

High memory density allows for storing a large amount of data in a compact space.

Temperature Grade: INDUSTRIAL

Designed to withstand industrial operating conditions, ensuring reliability in harsh environments.

Technical Specifications

SRAM N64S0830HDAS2-20I attributes and parameters. Explore more SRAM devices from Onsemi

Specs

JESD-30 Code:

R-PDSO-G8

Length:

4.9 mm

Memory Density:

65536 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

8192 words

No. of Words Code:

8K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

3.91 mm

Trade Compliance

N64S0830HDAS2-20I Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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