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N64S0830HDAT2-20I

Onsemi

N64S0830HDAT2-20I by Onsemi

N64S0830HDAT2-20I by Onsemi is an 8Kx8 SRAM with 8192 words, 65536 bit memory density, and operates at a voltage range of 2.3V to 3.6V. It is ideal for industrial applications requiring fast and reliable data storage in a compact form factor.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,204 parts In-Stock

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Digiode

USA . 1,176 parts In-Stock

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Problanco Electronics

Mexico . 8,394 parts In-Stock

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Kulean Microsystems

USA . 5,929 parts In-Stock

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TANS Electronics

Latvia . 4,939 parts In-Stock

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Corphita

USA . 2,468 parts In-Stock

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SupplyDigital Components

Austria . 1,851 parts In-Stock

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UHIMA Technologies

Türkiye . 889 parts In-Stock

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889

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Assy Fe

Spain . 100 parts In-Stock

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Corohmni

South Africa . 82 parts In-Stock

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Overview

Experience the unmatched quality and reliability of Onsemi with the N64S0830HDAT2-20I SRAM. This versatile memory IC offers seamless operation in industrial environments, ensuring optimal performance at temperatures ranging from -40 to 85 °C. With a compact design and low power consumption, this product is ideal for a wide range of applications including automotive, industrial automation, and telecommunications. Trust Onsemi to deliver cutting-edge technology that meets your needs, providing exceptional value and peace of mind for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the product easy to handle and resistant to damage during handling and transportation.

Surface Mount: YES

Allows for easy and secure installation onto circuit boards, reducing the risk of loose connections or damage.

Operating Mode: SYNCHRONOUS

Enables synchronized data transfers, improving efficiency and performance of the product.

Nominal Supply Voltage / Vsup (V): 3

Operates at a standard voltage level, ensuring compatibility with other components in the circuit.

No. of Terminals: 8

Provides sufficient connection points for integration into various electronic systems.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Compact design saves space on the circuit board, making it suitable for applications where size constraints are a concern.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, making it suitable for industrial applications where heat resistance is important.

Minimum Operating Temperature: -40 °C

Designed to function reliably in extreme cold temperatures, ensuring consistent performance in various environments.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing the efficiency and reliability of the product.

Memory IC Type: STANDARD SRAM

Standard SRAM technology provides fast access times and high-speed operation, making it ideal for applications that require quick data retrieval.

Technical Specifications

SRAM N64S0830HDAT2-20I attributes and parameters. Explore more SRAM devices from Onsemi

Specs

JESD-30 Code:

R-PDSO-G8

Length:

4.4 mm

Memory Density:

65536 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

8192 words

No. of Words Code:

8K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width:

3 mm

Trade Compliance

N64S0830HDAT2-20I Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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