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N64S830HAT22I

Onsemi

N64S830HAT22I by Onsemi

N64S830HAT22I by Onsemi is an 8Kx8 SRAM with 3.6V max supply voltage, 20MHz clock frequency, and -40 to 85°C operating temperature range. Ideal for industrial applications requiring fast synchronous memory access in a compact 0.65mm pitch package.

Median Price

$1.500

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 415 parts In-Stock

1+ parts

$1.500

100+ parts

$1.280

1k+ parts

$1.190

10k+ parts

$1.130

415

$1.500

$1.280

$1.190

$1.130

Mouser Electronics

USA . 118 parts In-Stock

1+ parts

$1.570

100+ parts

$1.280

1k+ parts

-

10k+ parts

$1.150

118

$1.570

$1.280

-

$1.150

DigiKey

USA . 45 parts In-Stock

1+ parts

$1.750

100+ parts

$1.593

1k+ parts

-

10k+ parts

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45

$1.750

$1.593

-

-

Rochester

USA . 891 parts In-Stock

1+ parts

-

100+ parts

$1.210

1k+ parts

$1.000

10k+ parts

$0.895

891

-

$1.210

$1.000

$0.895

Verical

USA . 891 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.363

10k+ parts

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891

-

-

$1.363

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,837 parts In-Stock

1+ parts

$0.940

100+ parts

-

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1,837

$0.940

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Vyrian

USA . 7,925 parts In-Stock

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7,925

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Cyclops Electronics Ltd

UK . 30 parts In-Stock

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30

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,103 parts In-Stock

1+ parts

$0.891

100+ parts

-

1k+ parts

-

10k+ parts

-

2,103

$0.891

-

-

-

Corohmni

South Africa . 225 parts In-Stock

1+ parts

$0.895

100+ parts

-

1k+ parts

-

10k+ parts

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225

$0.895

-

-

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Component Stockers USA

USA . 660 parts In-Stock

1+ parts

$1.000

100+ parts

$0.940

1k+ parts

-

10k+ parts

-

660

$1.000

$0.940

-

-

Microchip USA

USA . 1,366 parts In-Stock

1+ parts

$10.725

100+ parts

-

1k+ parts

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10k+ parts

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1,366

$10.725

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Kulean Microsystems

USA . 8,365 parts In-Stock

1+ parts

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8,365

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Problanco Electronics

Mexico . 3,957 parts In-Stock

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3,957

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-

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SupplyDigital Components

Austria . 3,797 parts In-Stock

1+ parts

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3,797

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TANS Electronics

Latvia . 1,078 parts In-Stock

1+ parts

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1,078

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iodParts Technologies Inc.

India . 500 parts In-Stock

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500

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Perfect Parts

USA . 342 parts In-Stock

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342

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UHIMA Technologies

Türkiye . 267 parts In-Stock

1+ parts

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267

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Overview

Unleash the power of innovation with the N64S830HAT22I by Onsemi! As a leading manufacturer in the industry, Onsemi strives for excellence in every product they create. The N64S830HAT22I falls under the category of SRAM, offering high-quality performance and reliability for various applications. With its synchronous operating mode, separate input/output type, and 8KX8 organization, this product delivers unparalleled value to customers. Experience the benefits of fast data access, low standby voltage, and industrial-grade temperature tolerance. Elevate your electronic designs with the N64S830HAT22I and discover new possibilities today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the product.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards.

Operating Mode: SYNCHRONOUS

Ensures synchronized data transfers and operations for efficient performance.

Nominal Supply Voltage / Vsup (V): 3

Suitable voltage level for stable and reliable operation of the product.

Maximum Operating Temperature: 85 °C

Can withstand high temperature environments without compromising performance.

Memory IC Type: STANDARD SRAM

Standard SRAM technology ensures fast and reliable memory access for various applications.

Technical Specifications

SRAM N64S830HAT22I attributes and parameters. Explore more SRAM devices from Onsemi

Specs

Maximum Clock Frequency (fCLK):

20 MHz

Input/Output Type:

SEPARATE

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.4 mm

Memory Density:

65536 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

1, (3 LINE)

No. of Terminals:

8

No. of Words:

8192 words

No. of Words Code:

8K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.000004 Amp

Minimum Standby Voltage:

2.3 V

Sub-Category:

SRAMs

Maximum Supply Current:

10 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3 mm

Trade Compliance

N64S830HAT22I Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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