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N64S0818HDAS2-20I

Onsemi

N64S0818HDAS2-20I by Onsemi

N64S0818HDAS2-20I by Onsemi is an 8KX8 SRAM with 1.7-1.95V Vsup, operating from -40 to 85 °C. It features a small outline package, synchronous mode, and GULL WING terminals. Ideal for industrial applications requiring high-speed memory access in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,830 parts In-Stock

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Digiode

USA . 632 parts In-Stock

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632

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SupplyDigital Components

Austria . 7,333 parts In-Stock

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7,333

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Problanco Electronics

Mexico . 6,391 parts In-Stock

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Kulean Microsystems

USA . 6,040 parts In-Stock

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Corphita

USA . 1,934 parts In-Stock

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TANS Electronics

Latvia . 1,152 parts In-Stock

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UHIMA Technologies

Türkiye . 282 parts In-Stock

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Corohmni

South Africa . 138 parts In-Stock

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Overview

Enhance your electronic devices with the N64S0818HDAS2-20I by Onsemi, a high-quality SRAM that offers unmatched performance and reliability. Onsemi is known for its cutting-edge technology and superior manufacturing processes, ensuring top-notch products every time. This versatile SRAM is perfect for a wide range of applications, from consumer electronics to industrial equipment. Experience the value and benefits of this product with its compact size, low power consumption, and seamless operation. Upgrade your projects with the N64S0818HDAS2-20I and enjoy enhanced efficiency and performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the SRAM, ensuring longevity and reliability.

Surface Mount: YES

The surface mount capability allows for easy installation on PCBs, saving time and effort in the assembly process.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures precise timing and coordination, making it suitable for applications requiring synchronized data transfer.

Nominal Supply Voltage / Vsup (V): 1.8

The 1.8V supply voltage offers low power consumption and compatibility with many electronic devices.

No. of Terminals: 8

With 8 terminals, the SRAM can easily connect to other components, making it versatile and adaptable to different systems.

Temperature Grade: INDUSTRIAL

Designed for industrial environments, this SRAM can withstand a wide temperature range, ensuring reliable performance in various conditions.

Memory Density: 65536 bit

With a high memory density, this SRAM can store a large amount of data in a compact space, making it suitable for memory-intensive applications.

Technical Specifications

SRAM N64S0818HDAS2-20I attributes and parameters. Explore more SRAM devices from Onsemi

Specs

JESD-30 Code:

R-PDSO-G8

Length:

4.9 mm

Memory Density:

65536 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

8192 words

No. of Words Code:

8K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

3.91 mm

Trade Compliance

N64S0818HDAS2-20I Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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