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N64S830HAS22IT

Onsemi

N64S830HAS22IT by Onsemi

N64S830HAS22IT by Onsemi is an 8KX8 SRAM with 3-STATE output, operating at 20 MHz clock frequency. It has a memory density of 65536 bit and supports a max supply voltage of 3.6 V. Ideal for industrial applications requiring high-speed synchronous memory with small outline package style.

Median Price

$1.680

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,877 parts In-Stock

1+ parts

$1.680

100+ parts

$1.461

1k+ parts

$1.349

10k+ parts

$1.061

2,877

$1.680

$1.461

$1.349

$1.061

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,431 parts In-Stock

1+ parts

$1.463

100+ parts

-

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1,431

$1.463

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Vyrian

USA . 948 parts In-Stock

1+ parts

$1.540

100+ parts

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948

$1.540

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 466 parts In-Stock

1+ parts

$1.386

100+ parts

-

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466

$1.386

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Corohmni

South Africa . 325 parts In-Stock

1+ parts

$1.540

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325

$1.540

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Microchip USA

USA . 5,506 parts In-Stock

1+ parts

$7.241

100+ parts

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5,506

$7.241

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SupplyDigital Components

Austria . 8,235 parts In-Stock

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8,235

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Problanco Electronics

Mexico . 5,102 parts In-Stock

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5,102

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Kepictronics

USA . 3,500 parts In-Stock

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3,500

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TANS Electronics

Latvia . 3,413 parts In-Stock

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3,413

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Kulean Microsystems

USA . 3,347 parts In-Stock

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3,347

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UHIMA Technologies

Türkiye . 410 parts In-Stock

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410

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Overview

Elevate your electronic devices to the next level with the N64S830HAS22IT from Onsemi. This SRAM memory chip offers unparalleled quality and reliability, thanks to Onsemi's decades of expertise in semiconductor manufacturing. Ideal for a wide range of applications, this chip provides seamless synchronous operation and separate input/output types. With a small outline package and industrial-grade design, this chip is perfect for demanding environments. Experience the value and benefits of superior memory performance with the N64S830HAS22IT by Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy materials provide durability and protection for the internal components of the SRAM, ensuring long-term reliability.

Surface Mount: YES

Surface mount technology allows for easy and secure installation on circuit boards, saving space and facilitating efficient assembly processes.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures precise timing and synchronization with other components in a system, resulting in optimized performance and reliability.

Nominal Supply Voltage / Vsup (V): 3

Having a nominal supply voltage of 3V makes this SRAM compatible with a wide range of systems and applications, providing versatility in design.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85 °C, this SRAM can reliably function in a variety of environmental conditions without the risk of overheating.

Memory Width: 8

The 8-bit memory width ensures efficient data storage and retrieval, making this SRAM suitable for applications requiring moderate data capacity.

Maximum Clock Frequency (fCLK): 20 MHz

The high maximum clock frequency of 20 MHz allows for fast data processing and communication speeds, enabling swift performance in demanding applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this SRAM energy-efficient and reliable for prolonged use.

Technical Specifications

SRAM N64S830HAS22IT attributes and parameters. Explore more SRAM devices from Onsemi

Specs

Maximum Clock Frequency (fCLK):

20 MHz

Input/Output Type:

SEPARATE

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.9 mm

Memory Density:

65536 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

1, (3 LINE)

No. of Terminals:

8

No. of Words:

8192 words

No. of Words Code:

8K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Maximum Standby Current:

.000004 Amp

Minimum Standby Voltage:

2.3 V

Sub-Category:

SRAMs

Maximum Supply Current:

10 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Trade Compliance

N64S830HAS22IT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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