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CY7C1059DV33-10ZSXIT

Infineon Technologies

CY7C1059DV33-10ZSXIT by Infineon Technologies

Infineon's CY7C1059DV33-10ZSXIT is a 3.3V SRAM with 1MX8 organization, 10ns access time, and 8388608-bit memory density. It operates in industrial temperatures and features a small outline package for space-constrained applications. Ideal for high-speed parallel data processing needs.

Median Price

$14.807

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

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Flip Electronics (Authorized)

USA . 9,013 parts In-Stock

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Verical

USA . 299 parts In-Stock

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$14.807

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299

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Nova Conductors

Japan . 50 parts In-Stock

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$14.560

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50

$14.560

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Flip Electronics

USA . 6,473 parts In-Stock

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Vyrian

USA . 4,583 parts In-Stock

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Chip Stock

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Digiode

USA . 814 parts In-Stock

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Distributors (Availability)

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Modulus Dynamics

Lithuania . 6,050 parts In-Stock

1+ parts

$4.474

100+ parts

$4.295

1k+ parts

$4.116

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6,050

$4.474

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$4.116

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Bastille Electronics

Australia . 120 parts In-Stock

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$14.560

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$13.832

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$12.958

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$12.958

Continental Prestige Electronics

USA . 2,925 parts In-Stock

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$14.560

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$14.269

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$14.269

Ampacity Inc.

Singapore . 4,605 parts In-Stock

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$27.390

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Lixinc

USA . 12,011 parts In-Stock

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Authorized Procurement Solutions

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Argo Parts USA

USA . 4,894 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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Futuretech Components

Singapore . 1,173 parts In-Stock

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Assy Fe

Spain . 582 parts In-Stock

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Corphita

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Microchip USA

USA . 111 parts In-Stock

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Overview

Elevate your electronic designs with the CY7C1059DV33-10ZSXIT from Infineon Technologies, a leading manufacturer known for top-quality products. This SRAM device offers unparalleled reliability and performance, making it perfect for a wide range of applications. With a compact design and impressive specifications, this memory module provides customers with exceptional value and efficiency. Upgrade your projects with the CY7C1059DV33-10ZSXIT and experience the difference that superior technology can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a durable and cost-effective casing for the SRAM chip.

Operating Mode: ASYNCHRONOUS

Allows for fast and efficient communication with other components in the system.

Nominal Supply Voltage / Vsup (V): 3.3

Optimal voltage for stable performance and reliability.

No. of Terminals: 44

Sufficient number of terminals for connectivity and data transfer.

Maximum Operating Temperature: 85 °C

Can operate in a wide range of temperatures, suitable for various environments.

Memory IC Type: STANDARD SRAM

A reliable and industry-standard memory type for efficient data storage and retrieval.

Technical Specifications

SRAM CY7C1059DV33-10ZSXIT attributes and parameters. Explore more SRAM devices from Infineon Technologies

Specs

Maximum Access Time:

10 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G44

JESD-609 Code:

e3

Length:

18.415 mm

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

44

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1MX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP44,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.194 mm

Maximum Standby Current:

.02 Amp

Minimum Standby Voltage:

2 V

Sub-Category:

SRAMs

Maximum Supply Current:

100 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

10.16 mm

Trade Compliance

CY7C1059DV33-10ZSXIT Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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