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71V124SA10PHGI

Renesas Electronics

71V124SA10PHGI by Renesas Electronics

Renesas Electronics' 71V124SA10PHGI is a 128Kx8 SRAM with 3.3V supply voltage, operating in industrial temperature range. It features asynchronous mode, 10ns access time, and 1.27mm terminal pitch. Ideal for applications requiring fast and reliable memory storage in compact electronic devices.

Median Price

$2.890

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 36 parts In-Stock

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$2.890

100+ parts

$2.710

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$2.450

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36

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VNN

France . 926 parts In-Stock

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Nova Conductors

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Ampacity Inc.

Singapore . 36 parts In-Stock

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$2.460

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Semicontronic

India . 36 parts In-Stock

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$2.460

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$2.398

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$2.386

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AZTECH Wire

Italy . 250 parts In-Stock

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$11.758

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Component Stockers USA

USA . 772 parts In-Stock

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$99.990

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Argo Parts USA

USA . 3,554 parts In-Stock

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Microchip USA

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Continental Prestige Electronics

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Bastille Electronics

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Overview

Experience top-notch performance and reliability with the 71V124SA10PHGI by Renesas Electronics. Renowned for quality, Renesas Electronics has crafted this SRAM memory chip to excel in a variety of applications. From industrial settings to consumer electronics, this product offers fast access times and low standby current, ensuring seamless operation. Trust in Renesas Electronics to deliver cutting-edge technology that enhances your products and elevates user experiences. Elevate your designs with the 71V124SA10PHGI and unlock a world of possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable.

Surface Mount: YES

Being surface mountable allows for easy installation and space-saving on circuit boards.

Nominal Supply Voltage / Vsup (V): 3.3

Operates at a standard voltage of 3.3V, ensuring compatibility with many systems.

Organization: 128KX8

Offers a high data organization of 128Kx8, providing ample storage capacity.

Technology: CMOS

CMOS technology enables low power consumption and high speed operation.

Maximum Access Time: 10 ns

The fast access time of 10 ns ensures quick data retrieval and processing.

Technical Specifications

SRAM 71V124SA10PHGI attributes and parameters. Explore more SRAM devices from Renesas Electronics

Specs

Maximum Access Time:

10 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G32

JESD-609 Code:

e3

Length:

20.95 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

32

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP32,.46

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.01 Amp

Minimum Standby Voltage:

3.15 V

Sub-Category:

SRAMs

Maximum Supply Current:

150 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3.15 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

10.16 mm

Trade Compliance

71V124SA10PHGI Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.B

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Renesas Electronics

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