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23K640-E/P

Microchip Technology

23K640-E/P by Microchip Technology

23K640-E/P by Microchip Technology is a CMOS SRAM with 8Kx8 organization and 65536-bit memory density. It operates at a max clock frequency of 16 MHz and has a nominal voltage of 3V. This memory IC is commonly used in automotive applications due to its TS16949 screening level and temperature grade.

Median Price

$0.960

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 280 parts In-Stock

1+ parts

$0.960

100+ parts

$0.926

1k+ parts

$0.873

10k+ parts

-

280

$0.960

$0.926

$0.873

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 36 parts In-Stock

1+ parts

$0.841

100+ parts

-

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36

$0.841

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Vyrian

USA . 6,869 parts In-Stock

1+ parts

-

100+ parts

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6,869

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VNN

France . 980 parts In-Stock

1+ parts

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980

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 184 parts In-Stock

1+ parts

$0.770

100+ parts

-

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184

$0.770

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Continental Prestige Electronics

USA . 1,265 parts In-Stock

1+ parts

$0.841

100+ parts

-

1k+ parts

-

10k+ parts

$0.824

1,265

$0.841

-

-

$0.824

Netroflash

USA . 500 parts In-Stock

1+ parts

$0.841

100+ parts

$0.824

1k+ parts

-

10k+ parts

-

500

$0.841

$0.824

-

-

Argo Parts USA

USA . 296 parts In-Stock

1+ parts

$0.841

100+ parts

-

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296

$0.841

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Corohmni

South Africa . 161 parts In-Stock

1+ parts

$3.379

100+ parts

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161

$3.379

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Advanced Electronics

New Zealand . 270 parts In-Stock

1+ parts

$5.626

100+ parts

$5.120

1k+ parts

$4.613

10k+ parts

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270

$5.626

$5.120

$4.613

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AZTECH Wire

Italy . 849 parts In-Stock

1+ parts

$7.942

100+ parts

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849

$7.942

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Marpe Global Electronics

Taiwan . 3,094 parts In-Stock

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3,094

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QualityLine Systems

Poland . 3,094 parts In-Stock

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3,094

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XL Components Corporation

Australia . 3,094 parts In-Stock

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3,094

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Overview

Experience the reliability and performance of the 23K640-E/P by Microchip Technology. As a leading manufacturer in the industry, Microchip Technology brings you this high-quality SRAM that offers countless benefits and advantages. With its synchronous operating mode and separate input/output type, this product delivers seamless functionality for a wide range of applications. Whether you need it for automotive or other demanding environments, this CMOS technology-based memory IC is built to withstand extreme conditions with its TS 16949 screening level and automotive temperature grade. Trust in Microchip Technology and unlock the power of the 23K640-E/P for your memory needs.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY. This material provides durability and protection for the SRAM, making it a reliable choice.

No. of Functions:

1. With a single function, this SRAM simplifies integration and improves overall system efficiency.

Screening Level:

TS 16949. This high screening level ensures the SRAM meets strict quality requirements, guaranteeing its reliability in automotive applications.

Package Shape:

RECTANGULAR. The rectangular shape allows for easy mounting and integration into various circuit designs.

Operating Mode:

SYNCHRONOUS. The synchronous operating mode enables precise timing and synchronization, optimizing system performance.

Input/Output Type:

SEPARATE. With separate input and output, this SRAM provides flexible data storage and retrieval capabilities.

Nominal Supply Voltage / Vsup (V):

3. Operating at a nominal supply voltage of 3V, this SRAM offers compatibility with standard power requirements.

Power Supplies (V):

3/3.3. Supporting dual power supplies at 3V and 3.3V, this SRAM can be seamlessly integrated into a wide range of systems.

No. of Terminals:

8. The limited number of terminals simplifies installation, reducing the complexity of system design and assembly.

Package Style (Meter):

IN-LINE. The in-line package style allows for space-efficient mounting, making it suitable for compact designs.

Maximum Operating Temperature:

125 °C. With a high maximum operating temperature, this SRAM can withstand demanding environments without performance degradation.

Organization:

8KX8. The 8KX8 organization provides a high-capacity storage solution, accommodating a large number of words and bits.

Output Characteristics:

3-STATE. The 3-state output characteristic allows for multiple devices to share a common bus, enhancing system flexibility.

Minimum Standby Voltage:

2.7 V. The low minimum standby voltage ensures efficient power consumption during idle periods, prolonging battery life.

Minimum Operating Temperature:

40 °C. With a wide minimum operating temperature range, this SRAM is suitable for harsh environments and temperature fluctuations.

Terminal Finish:

MATTE TIN. The matte tin terminal finish improves solderability and ensures proper electrical connections during assembly.

Terminal Position:

DUAL. The dual terminal position provides flexibility in PCB layout, enabling efficient and compact design configurations.

No. of Ports:

1. With a single port, this SRAM simplifies data transfer and enhances system simplicity.

Maximum Seated Height:

5.334 mm. The low maximum seated height allows for compact and space-efficient PCB designs.

Maximum Clock Frequency (fCLK):

16 MHz. With a high maximum clock frequency, this SRAM enables fast and efficient data processing.

Width:

7.62 mm. The compact width facilitates easy integration into various circuit layouts, optimizing space utilization.

Minimum Supply Voltage (Vsup):

2.7 V. The low minimum supply voltage allows for efficient power operation, making it suitable for low-power applications.

Length:

9.271 mm. The moderate length ensures easy mounting and compatibility with diverse system designs.

Temperature Grade:

AUTOMOTIVE. Designed for automotive applications, this SRAM withstands the demanding temperature and environmental conditions in vehicles.

Technology:

CMOS. Utilizing CMOS technology, this SRAM delivers high-speed performance and low power consumption, making it an efficient choice.

Parallel or Serial:

SERIAL. The serial data transfer mode simplifies connectivity and reduces the number of interface pins required for integration.

Terminal Form:

THROUGH-HOLE. The through-hole terminal form allows for easy soldering and reliable connections during assembly.

Maximum Supply Current:

10 mA. With a low maximum supply current, this SRAM maintains power efficiency and minimizes power consumption.

No. of Words:

8192 words. The high number of words provides ample storage capacity for data-intensive applications.

Memory Width:

8. With a memory width of 8 bits, this SRAM enables efficient data handling and storage.

Terminal Pitch:

2.54 mm. The terminal pitch of 2.54 mm ensures compatibility with standard PCB layouts and facilitates easy integration.

No. of Words Code:

8K. The 8K words code indicates a high memory capacity, making this SRAM suitable for applications requiring extensive data storage.

Maximum Supply Voltage (Vsup):

3.6 V. The high maximum supply voltage capability allows for versatile power supply options in different system configurations.

Memory Density:

65536 bit. With a high memory density of 65536 bits, this SRAM offers ample storage for data-intensive tasks.

Memory IC Type:

STANDARD SRAM. Being a standard SRAM, this product ensures compatibility and widespread support, making it a reliable choice.

Maximum Standby Current:

0.00001 Amp. The extremely low maximum standby current ensures minimal power consumption when the SRAM is not in use, maximizing energy efficiency.

Technical Specifications

SRAM 23K640-E/P attributes and parameters. Explore more SRAM devices from Microchip Technology

Specs

Maximum Clock Frequency (fCLK):

16 MHz

Input/Output Type:

SEPARATE

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e3

Length:

9.271 mm

Memory Density:

65536 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

8

No. of Words:

8192 words

No. of Words Code:

8K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8KX8

Output Characteristics:

3-STATE

Output Enable:

NO

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP8,.3

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

SERIAL

Power Supplies (V):

3/3.3

Qualification:

Not Qualified

Screening Level:

TS 16949

Maximum Seated Height:

5.334 mm

Maximum Standby Current:

.00001 Amp

Minimum Standby Voltage:

2.7 V

Sub-Category:

SRAMs

Maximum Supply Current:

10 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Trade Compliance

23K640-E/P Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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