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N64S0818HDAS220

Onsemi

N64S0818HDAS220 by Onsemi

N64S0818HDAS220 by Onsemi is an 8Kx8 SRAM with 25ns access time, operating at 1.7-1.95V. Ideal for industrial applications, it features a small outline package and Gull Wing terminals for surface mounting in synchronous mode.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,110 parts In-Stock

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Vyrian

USA . 193 parts In-Stock

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Kulean Microsystems

USA . 6,026 parts In-Stock

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Problanco Electronics

Mexico . 5,698 parts In-Stock

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SupplyDigital Components

Austria . 4,594 parts In-Stock

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Corphita

USA . 2,346 parts In-Stock

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TANS Electronics

Latvia . 2,145 parts In-Stock

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Corohmni

South Africa . 111 parts In-Stock

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UHIMA Technologies

Türkiye . 66 parts In-Stock

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Overview

Enhance your electronic devices with the N64S0818HDAS220 by Onsemi! This high-quality SRAM memory chip boasts a compact design, industrial temperature grade, and synchronous operating mode, making it perfect for a wide range of applications. With a memory density of 65536 bits and lightning-fast access time of only 25 ns, this product offers exceptional value and performance to customers seeking reliable and efficient memory solutions. Trust in Onsemi's expertise and elevate your projects with the N64S0818HDAS220 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures durability and protection for the internal components of the SRAM, making it a reliable choice for long-term use.

Surface Mount: YES

Being surface mountable makes the SRAM easy to integrate into circuit boards, simplifying the manufacturing and assembly process.

Operating Mode: SYNCHRONOUS

The synchronous operating mode ensures precise timing and coordination within the SRAM system, enabling efficient data transfer and processing.

Nominal Supply Voltage: 1.8V

The low nominal supply voltage of 1.8V helps in reducing power consumption and heat generation, making the SRAM energy-efficient.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85 °C, the SRAM can withstand elevated temperatures and operate reliably in various environments.

Memory Width: 8

Having a memory width of 8 bits allows the SRAM to process and store data efficiently, contributing to its performance and speed.

Technology: CMOS

Utilizing CMOS technology enhances the efficiency and reliability of the SRAM, offering low power consumption and high noise immunity.

Maximum Access Time: 25 ns

The fast maximum access time of 25 nanoseconds ensures quick retrieval of data from the SRAM, making it suitable for high-speed applications.

Technical Specifications

SRAM N64S0818HDAS220 attributes and parameters. Explore more SRAM devices from Onsemi

Specs

Maximum Access Time:

25 ns

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3/e4

Length:

4.9 mm

Memory Density:

65536 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

8192 words

No. of Words Code:

8K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN/NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

3.91 mm

Trade Compliance

N64S0818HDAS220 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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