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N64S830HAT22IT

Onsemi

N64S830HAT22IT by Onsemi

N64S830HAT22IT by Onsemi is an 8KX8 SRAM with a memory density of 65536 bit. It operates at a max clock frequency of 20 MHz and has a small outline, thin profile package style. Ideal for industrial applications requiring fast synchronous memory with separate I/O type and 3-state output characteristics.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,451 parts In-Stock

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Vyrian

USA . 519 parts In-Stock

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Kulean Microsystems

USA . 6,703 parts In-Stock

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Problanco Electronics

Mexico . 4,160 parts In-Stock

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SupplyDigital Components

Austria . 3,548 parts In-Stock

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TANS Electronics

Latvia . 3,040 parts In-Stock

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Corphita

USA . 1,205 parts In-Stock

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Corohmni

South Africa . 412 parts In-Stock

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UHIMA Technologies

Türkiye . 27 parts In-Stock

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Overview

Discover the cutting-edge N64S830HAT22IT by Onsemi, a top-tier manufacturer in the field of SRAM technology. This sleek and compact device offers unparalleled performance and reliability, making it perfect for various applications. With a nominal supply voltage of 3V and a maximum clock frequency of 20 MHz, this product provides exceptional value to customers seeking high-quality memory solutions. Elevate your projects with the N64S830HAT22IT and experience the benefits of superior design and innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the SRAM, ensuring it can withstand the demands of various applications.

Surface Mount: YES

Being surface mountable makes installation easier and more efficient, saving time and effort during assembly.

Operating Mode: SYNCHRONOUS

Syncronous operation helps in achieving precise and coordinated data transfer, improving overall performance of the SRAM.

Nominal Supply Voltage / Vsup (V): 3

Operating at a standard voltage makes it compatible with a wide range of systems and devices.

Power Supplies (V): 2.5/3.3

Compatibility with multiple power supplies offers flexibility in powering the SRAM, accommodating different system requirements.

No. of Terminals: 8

Having a sufficient number of terminals allows for proper interfacing and connection within the system.

Technology: CMOS

CMOS technology provides low power consumption and high noise immunity, making the SRAM energy-efficient and reliable.

Memory Density: 65536 bit

With a high memory density, this SRAM can store a large amount of data efficiently, making it suitable for demanding applications.

Maximum Clock Frequency (fCLK): 20 MHz

The high clock frequency allows for fast data processing and access, enhancing the overall speed and performance of the SRAM.

Technical Specifications

SRAM N64S830HAT22IT attributes and parameters. Explore more SRAM devices from Onsemi

Specs

Maximum Clock Frequency (fCLK):

20 MHz

Input/Output Type:

SEPARATE

JESD-30 Code:

R-PDSO-G8

Length:

4.4 mm

Memory Density:

65536 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Ports:

1, (3 LINE)

No. of Terminals:

8

No. of Words:

8192 words

No. of Words Code:

8K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

SERIAL

Power Supplies (V):

2.5/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.000004 Amp

Minimum Standby Voltage:

2.3 V

Sub-Category:

SRAMs

Maximum Supply Current:

10 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width:

3 mm

Trade Compliance

N64S830HAT22IT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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