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N64S818HAS21I

Onsemi

N64S818HAS21I by Onsemi

N64S818HAS21I by Onsemi is an 8KX8 SRAM with 16 MHz clock frequency, 1.8V supply, and -40 to 85 °C operating range. Ideal for industrial applications requiring small outline package and separate I/O type in a synchronous mode setup.

Median Price

$1.400

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 17 parts In-Stock

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$1.400

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17

$1.400

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Distributors (In-Stock)

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Digiode

USA . 1,139 parts In-Stock

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$1.264

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1,139

$1.264

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Vyrian

USA . 2,733 parts In-Stock

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2,733

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Distributors (Availability)

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Corphita

USA . 1,567 parts In-Stock

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$1.197

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1,567

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Corohmni

South Africa . 246 parts In-Stock

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$1.330

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246

$1.330

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Kulean Microsystems

USA . 3,951 parts In-Stock

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3,951

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Problanco Electronics

Mexico . 3,532 parts In-Stock

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3,532

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TANS Electronics

Latvia . 2,680 parts In-Stock

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2,680

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Microchip USA

USA . 1,157 parts In-Stock

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SupplyDigital Components

Austria . 951 parts In-Stock

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951

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UHIMA Technologies

Türkiye . 731 parts In-Stock

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731

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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500

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Overview

Experience unparalleled reliability and performance with the N64S818HAS21I by Onsemi, a leading manufacturer in the industry. This SRAM device offers seamless operation in various applications, providing customers with a high-quality solution that exceeds expectations. With its advanced features and exceptional durability, this product ensures optimal efficiency and functionality. Trust Onsemi's expertise and elevate your projects with the N64S818HAS21I.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection to the internal components of the SRAM, making it a reliable choice for long-term use.

Operating Mode: SYNCHRONOUS

The synchronous operation mode ensures precise and coordinated data transfer within the SRAM, leading to efficient performance and data integrity.

Nominal Supply Voltage / Vsup (V): 1.8

With a nominal supply voltage of 1.8V, this SRAM offers optimal power efficiency without compromising on performance, making it suitable for energy-efficient applications.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85 °C ensures the SRAM can function reliably in a wide range of temperature environments, making it versatile and suitable for industrial use.

Memory IC Type: STANDARD SRAM

Being a standard SRAM, this product is widely compatible with various systems and applications, offering a reliable and proven memory solution.

Technical Specifications

SRAM N64S818HAS21I attributes and parameters. Explore more SRAM devices from Onsemi

Specs

Maximum Clock Frequency (fCLK):

16 MHz

Input/Output Type:

SEPARATE

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.9 mm

Memory Density:

65536 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

1, (3 LINE)

No. of Terminals:

8

No. of Words:

8192 words

No. of Words Code:

8K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Maximum Standby Current:

.0000005 Amp

Minimum Standby Voltage:

1.7 V

Sub-Category:

SRAMs

Maximum Supply Current:

10 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.91 mm

Trade Compliance

N64S818HAS21I Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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