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N04L63W2AT27I

Onsemi

N04L63W2AT27I by Onsemi

N04L63W2AT27I by Onsemi is a 256Kx16 SRAM with 3-STATE output, operating at 3V. It features a small outline package, suitable for industrial applications. With a max access time of 70ns and low standby current of 0.00001A, it offers reliable memory storage in various electronic devices.

Median Price

$3.595

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 99 parts In-Stock

1+ parts

-

100+ parts

$3.330

1k+ parts

$2.980

10k+ parts

$2.800

99

-

$3.330

$2.980

$2.800

DigiKey

USA . 99 parts In-Stock

1+ parts

-

100+ parts

$3.860

1k+ parts

$3.860

10k+ parts

$3.860

99

-

$3.860

$3.860

$3.860

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,136 parts In-Stock

1+ parts

$3.524

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-

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2,136

$3.524

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Vyrian

USA . 8,049 parts In-Stock

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8,049

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Distributors (Availability)

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Corphita

USA . 2,430 parts In-Stock

1+ parts

$3.339

100+ parts

-

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2,430

$3.339

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-

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Corohmni

South Africa . 361 parts In-Stock

1+ parts

$3.710

100+ parts

-

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361

$3.710

-

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SupplyDigital Components

Austria . 6,909 parts In-Stock

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6,909

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Microchip USA

USA . 4,799 parts In-Stock

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4,799

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Kulean Microsystems

USA . 2,408 parts In-Stock

1+ parts

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2,408

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TANS Electronics

Latvia . 2,252 parts In-Stock

1+ parts

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2,252

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Problanco Electronics

Mexico . 706 parts In-Stock

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706

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UHIMA Technologies

Türkiye . 629 parts In-Stock

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629

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Kepictronics

USA . 287 parts In-Stock

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287

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Continental Prestige Electronics

USA . 99 parts In-Stock

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Overview

Experience unparalleled performance and reliability with the N04L63W2AT27I by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch SRAM technology, making this product perfect for a wide range of applications. With its small outline, low profile package and common input/output type, this SRAM offers exceptional value and benefits to customers looking for high-quality memory solutions. Trust Onsemi to provide you with the best-in-class products that elevate your electronic devices to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the SRAM, making it suitable for industrial environments.

Surface Mount: YES

Allows for easy installation on PCBs, saving time and effort during assembly.

Operating Mode: ASYNCHRONOUS

Enables fast and independent access to memory cells, increasing overall performance.

Nominal Supply Voltage / Vsup (V): 3

Compatible with standard 3V power supplies, ensuring easy integration into existing systems.

No. of Words: 262144 words

Offers a large memory capacity, suitable for storing a significant amount of data.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high speed operation.

Technical Specifications

SRAM N04L63W2AT27I attributes and parameters. Explore more SRAM devices from Onsemi

Specs

Maximum Access Time:

70 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G44

Length:

18.41 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

44

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256KX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP44,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Parallel or Serial:

PARALLEL

Power Supplies (V):

3/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.25 mm

Maximum Standby Current:

.00001 Amp

Minimum Standby Voltage:

1.8 V

Sub-Category:

SRAMs

Maximum Supply Current:

16 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Width:

10.16 mm

Trade Compliance

N04L63W2AT27I Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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