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N04L163WC2AB-55I

Onsemi

N04L163WC2AB-55I by Onsemi

N04L163WC2AB-55I by Onsemi is a 256Kx16 SRAM with 70ns access time, operating at 3V. It features a low profile grid array package with 0.75mm terminal pitch. Ideal for industrial applications requiring fast and reliable parallel memory storage.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,072 parts In-Stock

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Digiode

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SupplyDigital Components

Austria . 7,574 parts In-Stock

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TANS Electronics

Latvia . 3,823 parts In-Stock

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Problanco Electronics

Mexico . 2,387 parts In-Stock

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Corphita

USA . 1,888 parts In-Stock

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Kulean Microsystems

USA . 804 parts In-Stock

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UHIMA Technologies

Türkiye . 193 parts In-Stock

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Corohmni

South Africa . 174 parts In-Stock

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Overview

Unlock unparalleled performance and reliability with the N04L163WC2AB-55I by Onsemi. As a leading manufacturer in the industry, Onsemi's SRAM category sets the standard for quality and innovation. This versatile product is perfect for a wide range of applications, offering customers unrivaled value and benefits. Experience seamless operation and superior functionality with this cutting-edge memory solution, designed to exceed expectations in every way. Elevate your projects with the N04L163WC2AB-55I and see the difference for yourself.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the SRAM, making it suitable for various environmental conditions.

Surface Mount: YES

The surface mount capability allows for easy and efficient installation on circuit boards, saving time and effort during assembly.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexible and independent access to data, enhancing the overall performance and efficiency of the SRAM.

Nominal Supply Voltage / Vsup (V): 3

The 3V supply voltage ensures compatibility with standard power sources, making integration into existing systems seamless.

No. of Terminals: 48

With 48 terminals, the SRAM offers ample connectivity options for interfacing with other components, enabling versatile usage.

Maximum Operating Temperature: 85 °C

The high operating temperature range of 85 °C ensures reliable performance even in extreme conditions, increasing the product's reliability.

Organization: 256KX16

The 256KX16 organization provides a high memory density and data storage capacity, suitable for demanding applications requiring large amounts of memory.

Technology: CMOS

CMOS technology offers low power consumption and high-speed operation, making the SRAM energy-efficient and responsive in data processing tasks.

Memory Width: 16

With a memory width of 16 bits, the SRAM can handle data processing tasks efficiently, offering a balance between speed and storage capacity.

Maximum Access Time: 70 ns

The fast access time of 70 nanoseconds ensures quick retrieval of data, enhancing the overall performance and responsiveness of the SRAM.

Technical Specifications

SRAM N04L163WC2AB-55I attributes and parameters. Explore more SRAM devices from Onsemi

Specs

Maximum Access Time:

70 ns

JESD-30 Code:

R-PBGA-B48

JESD-609 Code:

e0

Length:

8 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

48

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256KX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

1.34 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Width:

6 mm

Trade Compliance

N04L163WC2AB-55I Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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