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N04L163WC1AT-70I

Onsemi

N04L163WC1AT-70I by Onsemi

N04L163WC1AT-70I by Onsemi is a 256Kx16 SRAM with 70ns access time, operating at 3V. It features a small outline package, operates in industrial temperature range (-40 to 85 °C), and has a memory density of 4Mb. Ideal for applications requiring fast and reliable data storage in harsh environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 2,264 parts In-Stock

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Digiode

USA . 869 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 262 parts In-Stock

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SupplyDigital Components

Austria . 5,779 parts In-Stock

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Kulean Microsystems

USA . 2,302 parts In-Stock

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Problanco Electronics

Mexico . 2,277 parts In-Stock

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TANS Electronics

Latvia . 1,334 parts In-Stock

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UHIMA Technologies

Türkiye . 965 parts In-Stock

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Corphita

USA . 510 parts In-Stock

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Corohmni

South Africa . 457 parts In-Stock

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Overview

Unlock the power of reliable data storage with the N04L163WC1AT-70I by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and performance in every product. This SRAM device offers unparalleled value with its versatile applications, providing customers with fast and efficient data processing solutions. Whether used in industrial settings or consumer electronics, this memory device guarantees seamless operation and enhanced functionality. Experience the benefits of superior technology with the N04L163WC1AT-70I by Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material offers durability and ensures the protection of the internal components of the SRAM, making it a reliable choice for long-term use.

Surface Mount: YES

Being surface mountable allows for easy and convenient installation on circuit boards, saving space and simplifying the manufacturing process.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for quick access to data without the need for a clock signal, providing efficient performance in various applications.

Nominal Supply Voltage / Vsup (V): 3

The 3V nominal supply voltage ensures compatibility with a wide range of systems, offering flexibility in integration and power management.

No. of Words: 262144 words

With a large storage capacity of 262144 words, this SRAM can accommodate extensive data requirements, making it suitable for high-performance computing and data-intensive applications.

Maximum Access Time: 70 ns

The fast maximum access time of 70 ns ensures quick data retrieval and processing, making this SRAM ideal for applications that require rapid data access and response times.

Technical Specifications

SRAM N04L163WC1AT-70I attributes and parameters. Explore more SRAM devices from Onsemi

Specs

Maximum Access Time:

70 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G44

JESD-609 Code:

e0

Length:

18.41 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

44

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256KX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP44,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Parallel or Serial:

PARALLEL

Power Supplies (V):

3/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.25 mm

Maximum Standby Current:

.00001 Amp

Minimum Standby Voltage:

1.8 V

Sub-Category:

SRAMs

Maximum Supply Current:

16 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Width:

10.16 mm

Trade Compliance

N04L163WC1AT-70I Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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