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N04L163WC1AB-85I

Onsemi

N04L163WC1AB-85I by Onsemi

N04L163WC1AB-85I by Onsemi is a 256Kx16 SRAM with 85ns access time, operating at 3V. It features a low profile grid array package with 0.75mm terminal pitch. Ideal for industrial applications requiring fast and reliable parallel memory storage.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,162 parts In-Stock

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Vyrian

USA . 957 parts In-Stock

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957

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Kulean Microsystems

USA . 7,990 parts In-Stock

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7,990

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TANS Electronics

Latvia . 3,874 parts In-Stock

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Problanco Electronics

Mexico . 3,301 parts In-Stock

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SupplyDigital Components

Austria . 2,199 parts In-Stock

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Corphita

USA . 972 parts In-Stock

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UHIMA Technologies

Türkiye . 387 parts In-Stock

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Corohmni

South Africa . 129 parts In-Stock

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Overview

Unlock lightning-fast data processing with the N04L163WC1AB-85I by Onsemi. This high-quality SRAM memory module offers unparalleled reliability and performance, making it ideal for a wide range of applications. With its advanced technology and industrial-grade construction, this product ensures seamless operation even in the most demanding environments. Experience the benefits of faster data access and improved efficiency with the N04L163WC1AB-85I, your go-to solution for all your memory needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material makes the product lightweight and durable, suitable for various applications.

Surface Mount: YES

Being surface mountable allows for easy installation and space-saving on circuit boards.

Operating Mode: ASYNCHRONOUS

Asynchronous operation provides flexibility and allows for independent operation of different functions within the device.

Nominal Supply Voltage / Vsup (V): 3

Operating at a nominal supply voltage of 3V ensures energy efficiency and compatibility with standard power sources.

No. of Terminals: 48

Having 48 terminals allows for robust connectivity and efficient data transfer within the product.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, the product can withstand high temperature environments without performance degradation.

Organization: 256KX16

The 256KX16 organization provides a large memory capacity and efficient data storage capabilities.

Technology: CMOS

CMOS technology offers low power consumption, high speed, and reliability, making the product suitable for a wide range of applications.

Memory Width: 16

A memory width of 16 bits enables the product to process and store data efficiently.

Memory Density: 4194304 bit

With a high memory density of 4194304 bits, the product can store a large amount of data in a compact form factor.

Technical Specifications

SRAM N04L163WC1AB-85I attributes and parameters. Explore more SRAM devices from Onsemi

Specs

Maximum Access Time:

85 ns

JESD-30 Code:

R-PBGA-B48

JESD-609 Code:

e0

Length:

8 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

48

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256KX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

1.34 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Width:

6 mm

Trade Compliance

N04L163WC1AB-85I Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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