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N04L163WC2AB2-55I

Onsemi

N04L163WC2AB2-55I by Onsemi

N04L163WC2AB2-55I by Onsemi is a 256Kx16 SRAM with 70ns access time, operating at 3V. It features a low profile grid array package and operates in industrial temperature range. Ideal for applications requiring fast and reliable parallel memory storage.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,780 parts In-Stock

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Vyrian

USA . 1,474 parts In-Stock

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Kulean Microsystems

USA . 6,841 parts In-Stock

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SupplyDigital Components

Austria . 6,281 parts In-Stock

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Problanco Electronics

Mexico . 4,849 parts In-Stock

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TANS Electronics

Latvia . 1,527 parts In-Stock

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UHIMA Technologies

Türkiye . 475 parts In-Stock

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475

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Corphita

USA . 326 parts In-Stock

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Corohmni

South Africa . 236 parts In-Stock

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Overview

Unlock the power of reliable and high-performance memory with the N04L163WC2AB2-55I by Onsemi. Crafted with precision and expertise, this SRAM module offers unparalleled speed and efficiency for a wide range of industrial applications. With a nominal supply voltage of 3V, low profile design, and industrial temperature grade, this memory IC is perfect for demanding environments where reliability is key. Trust Onsemi to deliver cutting-edge technology that brings value and peace of mind to customers looking for top-notch memory solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the SRAM, ensuring longevity and reliability.

Operating Mode: ASYNCHRONOUS

Allows for independent operation of memory cells, increasing flexibility and speed in data retrieval.

Nominal Supply Voltage / Vsup (V): 3

Optimal voltage for efficient performance and stability of the SRAM.

Maximum Operating Temperature: 85 °C

Ensures reliable operation even in high temperature environments, making it suitable for industrial use.

Memory Width: 16

Provides sufficient memory capacity for storing and accessing data efficiently.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing the overall efficiency of the SRAM.

Maximum Access Time: 70 ns

Fast access time ensures quick data retrieval and processing, making the SRAM ideal for applications requiring high-speed performance.

Technical Specifications

SRAM N04L163WC2AB2-55I attributes and parameters. Explore more SRAM devices from Onsemi

Specs

Maximum Access Time:

70 ns

JESD-30 Code:

R-PBGA-B48

JESD-609 Code:

e1

Length:

8 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

48

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256KX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

1.34 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Width:

6 mm

Trade Compliance

N04L163WC2AB2-55I Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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