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IS61WV25616EDBLL-10BLI-TR

Integrated Silicon Solution

IS61WV25616EDBLL-10BLI-TR by Integrated Silicon Solution

IS61WV25616EDBLL-10BLI-TR by Integrated Silicon Solution is a 256KX16 SRAM with 3-STATE output, operating at 3V. It features a thin profile grid array package and operates in industrial temperature range. Ideal for applications requiring fast access time of 10ns and low standby current consumption of 0.006A.

Median Price

$3.260

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,109 parts In-Stock

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NAC Semi

USA . 5,000 parts In-Stock

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ComSIT Distribution GmbH

Germany . 1,785 parts In-Stock

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Nova Conductors

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AZTECH Wire

Italy . 822 parts In-Stock

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$9.030

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Eastek

USA . 12,500 parts In-Stock

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GreenTree Electronics

Israel . 5,000 parts In-Stock

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Argo Parts USA

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Continental Prestige Electronics

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Authorized Procurement Solutions

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Bastille Electronics

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Overview

Looking for high-quality SRAM memory solutions? Look no further than the IS61WV25616EDBLL-10BLI-TR by Integrated Silicon Solution. With a package body material made of durable PLASTIC/EPOXY and a thin profile, fine pitch design, this memory module is perfect for industrial applications requiring reliable performance. Boasting a 256Kx16 organization and 3-STATE output characteristics, this SRAM offers fast access times and low standby current, making it ideal for a wide range of industrial and application-specific uses. Trust Integrated Silicon Solution for top-notch memory solutions that deliver exceptional value and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material for ease of handling and long-term use.

Surface Mount: YES

Allows for easy and secure installation on circuit boards.

Operating Mode: ASYNCHRONOUS

Provides flexibility in data transfer and communication processes.

Nominal Supply Voltage / Vsup (V): 3

Compatible with standard voltage requirements for various electronic systems.

No. of Terminals: 48

Sufficient number of terminals for effective connectivity within a circuit.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, suitable for industrial applications.

Organization: 256KX16

Organized memory layout for efficient data storage and retrieval.

Output Characteristics: 3-STATE

Provides multiple output states for versatile data transmission.

Minimum Standby Voltage: 2 V

Allows for low power consumption in standby mode.

Minimum Operating Temperature: -40 °C

Operational in extreme cold conditions, suitable for various environments.

Technology: CMOS

Utilizes low power consumption, ideal for battery-operated devices.

Maximum Access Time: 10 ns

Fast access time for quick data retrieval and processing.

Technical Specifications

SRAM IS61WV25616EDBLL-10BLI-TR attributes and parameters. Explore more SRAM devices from Integrated Silicon Solution

Specs

Maximum Access Time:

10 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PBGA-B48

JESD-609 Code:

e3

Length:

8 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

48

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256KX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA48,6X8,30

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Power Supplies (V):

2.5/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.006 Amp

Minimum Standby Voltage:

2 V

Sub-Category:

SRAMs

Maximum Supply Current:

35 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.4 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Width:

6 mm

Trade Compliance

IS61WV25616EDBLL-10BLI-TR Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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