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N04L1618C2AB-85I

Onsemi

N04L1618C2AB-85I by Onsemi

N04L1618C2AB-85I by Onsemi is a 256KX16 SRAM with 4194304 bit memory density. It operates at 1.8V, has a max access time of 85ns, and is designed for industrial applications requiring fast parallel memory access.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,437 parts In-Stock

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Vyrian

USA . 1,296 parts In-Stock

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SupplyDigital Components

Austria . 6,554 parts In-Stock

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Kulean Microsystems

USA . 6,336 parts In-Stock

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Problanco Electronics

Mexico . 4,930 parts In-Stock

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Corphita

USA . 2,385 parts In-Stock

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UHIMA Technologies

Türkiye . 856 parts In-Stock

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Corohmni

South Africa . 197 parts In-Stock

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TANS Electronics

Latvia . 9 parts In-Stock

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Overview

Experience unparalleled performance and reliability with the N04L1618C2AB-85I by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality SRAM products that are perfect for a wide range of applications. From industrial to consumer electronics, this product offers exceptional value with its high-speed operation and low power consumption. Upgrade your systems today with the N04L1618C2AB-85I and enjoy the benefits of seamless performance and cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring long-term reliability.

Surface Mount: YES

Allows for easy and secure installation on circuit boards, saving space and simplifying assembly processes.

Operating Mode: ASYNCHRONOUS

Enables independent operation of the memory, enhancing overall system performance.

Nominal Supply Voltage / Vsup (V): 1.8

Optimal voltage for efficient and stable memory operation.

No. of Terminals: 48

Offers enough connection points for effective data transfer and communication with other components.

Maximum Operating Temperature: 85 °C

Suitable for industrial environments with varying temperature conditions, ensuring consistent performance.

Organization: 256KX16

Provides a high memory capacity and data width for storing and accessing large amounts of information.

Minimum Operating Temperature: -40 °C

Can operate in extreme cold conditions without compromising functionality.

Terminal Finish: TIN LEAD

Ensures reliable and durable electrical connections, reducing the risk of signal loss or interference.

Maximum Seated Height: 1.34 mm

Low-profile design saves space and enables installation in compact electronic devices.

Width: 6 mm

Compact size allows for easy integration into various electronic applications.

Minimum Supply Voltage (Vsup): 1.65 V

Ensures stable memory operation even at lower voltage levels, conserving power.

Length: 8 mm

Optimal size for fitting into different circuit board layouts.

Temperature Grade: INDUSTRIAL

Designed to withstand harsh industrial environments with reliable performance.

Technology: CMOS

Provides low power consumption and high noise immunity for efficient memory operation.

No. of Words: 262144 words

Offers a large memory capacity for storing extensive data sets.

Memory Width: 16

Enables efficient data transfer and processing with a wider memory bandwidth.

Terminal Pitch: 0.75 mm

Allows for precise and secure connections on the circuit board.

Maximum Access Time: 85 ns

Fast access time ensures quick retrieval of data, improving overall system performance.

Technical Specifications

SRAM N04L1618C2AB-85I attributes and parameters. Explore more SRAM devices from Onsemi

Specs

Maximum Access Time:

85 ns

JESD-30 Code:

R-PBGA-B48

JESD-609 Code:

e0

Length:

8 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

48

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256KX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

1.34 mm

Maximum Supply Voltage (Vsup):

2.2 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Width:

6 mm

Trade Compliance

N04L1618C2AB-85I Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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