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N25S830HAS22I

Onsemi

N25S830HAS22I by Onsemi

N25S830HAS22I by Onsemi is a 32KX8 SRAM with synchronous operation and 3-STATE output. It operates at 3V, has a clock frequency of 20MHz, and is ideal for industrial applications requiring high-speed memory access in small outline packages.

Median Price

$1.336

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

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Newark

USA . 1 parts In-Stock

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$0.420

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$0.420

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$0.420

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$0.420

1

$0.420

$0.420

$0.420

$0.420

Arrow

USA . 114 parts In-Stock

1+ parts

$1.361

100+ parts

$1.235

1k+ parts

$1.153

10k+ parts

$1.092

114

$1.361

$1.235

$1.153

$1.092

Chip1Stop

Japan . 459 parts In-Stock

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$1.440

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$1.440

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Mouser Electronics

USA . 98 parts In-Stock

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$1.910

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$1.360

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$1.290

98

$1.910

$1.360

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$1.290

DigiKey

USA . 73 parts In-Stock

1+ parts

$1.910

100+ parts

$1.653

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$1.524

10k+ parts

$1.437

73

$1.910

$1.653

$1.524

$1.437

Rochester

USA . 11,290 parts In-Stock

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-

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$1.230

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$1.100

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$1.030

11,290

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$1.230

$1.100

$1.030

Verical

USA . 6,900 parts In-Stock

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$1.231

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$1.231

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Future Electronics

Canada . 418 parts In-Stock

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$1.310

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$1.270

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418

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$1.310

$1.270

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Distributors (In-Stock)

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Digiode

USA . 1,794 parts In-Stock

1+ parts

$0.399

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1,794

$0.399

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Component Electronics Inc.

Canada . 10 parts In-Stock

1+ parts

$2.690

100+ parts

$2.020

1k+ parts

$1.750

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10

$2.690

$2.020

$1.750

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Flip Electronics

USA . 9,900 parts In-Stock

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Vyrian

USA . 3,484 parts In-Stock

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3,484

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IBS Electronics

USA . 418 parts In-Stock

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$1.823

1k+ parts

$1.781

10k+ parts

$1.767

418

-

$1.823

$1.781

$1.767

NAC Semi

USA . 200 parts In-Stock

1+ parts

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100+ parts

$2.680

1k+ parts

$2.440

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200

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$2.680

$2.440

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ACDS - Activité Composants Distribution Service

France . 137 parts In-Stock

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Dan-Mar Components

USA . 137 parts In-Stock

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Bristol Electronics

USA . 37 parts In-Stock

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$0.819

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$0.819

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Distributors (Availability)

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Corphita

USA . 2,383 parts In-Stock

1+ parts

$0.378

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$0.378

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Corohmni

South Africa . 112 parts In-Stock

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$0.420

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Continental Prestige Electronics

USA . 27 parts In-Stock

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$1.050

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$1.050

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Microchip USA

USA . 2,325 parts In-Stock

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$14.755

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Kepictronics

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TANS Electronics

Latvia . 7,021 parts In-Stock

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SupplyDigital Components

Austria . 3,027 parts In-Stock

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Problanco Electronics

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Authorized Procurement Solutions

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Kulean Microsystems

USA . 1,487 parts In-Stock

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Perfect Parts

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UHIMA Technologies

Türkiye . 748 parts In-Stock

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Overview

Unlock the power of reliable data storage with the N25S830HAS22I by Onsemi. Crafted with precision and quality, this SRAM memory module offers seamless performance in a compact package. Ideal for industrial applications, this synchronous memory device provides fast and efficient data processing capabilities. With a nominal supply voltage of 3V and a maximum clock frequency of 20 MHz, this product delivers high-speed functionality while maintaining low power consumption. Trust Onsemi's expertise in semiconductor manufacturing to bring you cutting-edge technology that meets your needs. Elevate your projects with the N25S830HAS22I and experience unparalleled efficiency and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the SRAM, making it suitable for various environments and conditions.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for precise timing, ensuring efficient data transfer and processing.

Nominal Supply Voltage / Vsup (V): 3

Operating at a standard voltage of 3V ensures compatibility with a wide range of systems and devices.

No. of Terminals: 8

The compact design with 8 terminals allows for easy integration and connection within a circuit or system.

Maximum Operating Temperature: 85 °C

With a high operating temperature range, this SRAM can perform reliably in demanding industrial environments.

Memory IC Type: STANDARD SRAM

As a standard SRAM memory IC, this product offers reliable and fast access to stored data, making it a versatile choice for various applications.

Technical Specifications

SRAM N25S830HAS22I attributes and parameters. Explore more SRAM devices from Onsemi

Specs

Maximum Clock Frequency (fCLK):

20 MHz

Input/Output Type:

SEPARATE

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.9 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

1, (3 LINE)

No. of Terminals:

8

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Maximum Standby Current:

.000004 Amp

Minimum Standby Voltage:

2.7 V

Sub-Category:

SRAMs

Maximum Supply Current:

10 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.91 mm

Trade Compliance

N25S830HAS22I Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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