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N25S818HAT21I

Onsemi

N25S818HAT21I by Onsemi

N25S818HAT21I by Onsemi is a 32KX8 SRAM with 1.8V supply, operating at -40 to 85 °C. It features synchronous mode, 16 MHz clock frequency, and 0.65mm terminal pitch. Ideal for industrial applications requiring high-speed memory with low power consumption.

Median Price

$1.302

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 4 parts In-Stock

1+ parts

$0.980

100+ parts

-

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4

$0.980

-

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Arrow

USA . 590 parts In-Stock

1+ parts

$1.167

100+ parts

-

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10k+ parts

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590

$1.167

-

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Mouser Electronics

USA . 17 parts In-Stock

1+ parts

$1.910

100+ parts

$1.650

1k+ parts

$1.560

10k+ parts

$1.430

17

$1.910

$1.650

$1.560

$1.430

Rochester

USA . 13,202 parts In-Stock

1+ parts

-

100+ parts

$1.230

1k+ parts

$1.100

10k+ parts

$1.030

13,202

-

$1.230

$1.100

$1.030

Verical

USA . 11,800 parts In-Stock

1+ parts

-

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$1.375

10k+ parts

$1.288

11,800

-

-

$1.375

$1.288

DigiKey

USA . 300 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$1.610

10k+ parts

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300

-

-

$1.610

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 971 parts In-Stock

1+ parts

$0.751

100+ parts

-

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971

$0.751

-

-

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Vyrian

USA . 7,168 parts In-Stock

1+ parts

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7,168

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DigiKey Marketplace

USA . 300 parts In-Stock

1+ parts

-

100+ parts

$1.410

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300

-

$1.410

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Resion

USA . 53 parts In-Stock

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53

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Distributors (Availability)

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Corphita

USA . 403 parts In-Stock

1+ parts

$0.712

100+ parts

-

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403

$0.712

-

-

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Corohmni

South Africa . 103 parts In-Stock

1+ parts

$0.791

100+ parts

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103

$0.791

-

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Component Stockers USA

USA . 1,569 parts In-Stock

1+ parts

$1.280

100+ parts

$1.180

1k+ parts

$1.180

10k+ parts

$1.180

1,569

$1.280

$1.180

$1.180

$1.180

Microchip USA

USA . 2,033 parts In-Stock

1+ parts

$14.755

100+ parts

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2,033

$14.755

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RC Electronics

USA . 20,223 parts In-Stock

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20,223

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Lixinc

USA . 18,586 parts In-Stock

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18,586

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A-Z Elektronik GmbH

Germany . 7,463 parts In-Stock

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7,463

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Problanco Electronics

Mexico . 6,048 parts In-Stock

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6,048

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Kepictronics

USA . 4,600 parts In-Stock

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4,600

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Kulean Microsystems

USA . 3,673 parts In-Stock

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3,673

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SupplyDigital Components

Austria . 2,496 parts In-Stock

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2,496

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TANS Electronics

Latvia . 1,788 parts In-Stock

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1,788

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Perfect Parts

USA . 1,342 parts In-Stock

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1,342

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UHIMA Technologies

Türkiye . 151 parts In-Stock

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151

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GreenTree Electronics

Israel . 50 parts In-Stock

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50

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Overview

Unlock the next level of performance with the N25S818HAT21I by Onsemi, a top-of-the-line SRAM memory that boasts unparalleled quality and reliability. Crafted by the renowned manufacturer Onsemi, this product is designed to exceed expectations in various applications. With a compact design and advanced technology, this memory offers a seamless user experience and ensures optimal functionality. Elevate your projects with the N25S818HAT21I and experience the difference in performance and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material for the package, ensuring protection and easy handling of the SRAM.

Surface Mount: YES

Makes it easy to install and saves space on the circuit board.

Operating Mode: SYNCHRONOUS

Enhances the speed and efficiency of data transfer within the SRAM.

Nominal Supply Voltage / Vsup (V): 1.8

Efficient power usage at a low voltage, contributing to energy savings.

No. of Terminals: 8

Compact design with a low number of terminals for easy integration.

Maximum Operating Temperature: 85 °C

Can operate reliably in high-temperature environments.

Organization: 32KX8

Organized memory layout for efficient data storage and retrieval.

Maximum Clock Frequency (fCLK): 16 MHz

High clock frequency for fast data processing.

Technology: CMOS

Uses CMOS technology known for low power consumption and high speed.

No. of Words: 32768 words

Large storage capacity for data handling requirements.

Technical Specifications

SRAM N25S818HAT21I attributes and parameters. Explore more SRAM devices from Onsemi

Specs

Maximum Clock Frequency (fCLK):

16 MHz

Input/Output Type:

SEPARATE

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.4 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

1, (3 LINE)

No. of Terminals:

8

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Maximum Standby Current:

.0000005 Amp

Minimum Standby Voltage:

1.7 V

Sub-Category:

SRAMs

Maximum Supply Current:

10 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3 mm

Trade Compliance

N25S818HAT21I Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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