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N25S830HAS22IT

Onsemi

N25S830HAS22IT by Onsemi

N25S830HAS22IT by Onsemi is a 32Kx8 SRAM with synchronous operation, 20 MHz clock frequency, and 3-STATE output. It is ideal for industrial applications requiring a memory density of 262144 bit, operating at temperatures ranging from -40 to 85°C. The small outline package with matte tin finish makes it suitable for space-constrained designs.

Median Price

$1.322

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 3,512 parts In-Stock

1+ parts

$0.936

100+ parts

-

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10k+ parts

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3,512

$0.936

-

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Chip1Stop

Japan . 5,157 parts In-Stock

1+ parts

$1.320

100+ parts

$1.115

1k+ parts

$1.091

10k+ parts

$1.060

5,157

$1.320

$1.115

$1.091

$1.060

Mouser Electronics

USA . 866 parts In-Stock

1+ parts

$2.030

100+ parts

$1.790

1k+ parts

$1.670

10k+ parts

$1.350

866

$2.030

$1.790

$1.670

$1.350

DigiKey

USA . 4,357 parts In-Stock

1+ parts

$2.310

100+ parts

$2.008

1k+ parts

$1.852

10k+ parts

$1.387

4,357

$2.310

$2.008

$1.852

$1.387

Rochester

USA . 1,309,808 parts In-Stock

1+ parts

-

100+ parts

$1.190

1k+ parts

$1.060

10k+ parts

$1.000

1,309,808

-

$1.190

$1.060

$1.000

Verical

USA . 976,596 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.325

10k+ parts

$1.250

976,596

-

-

$1.325

$1.250

Flip Electronics (Authorized)

USA . 24,000 parts In-Stock

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-

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24,000

-

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Distributors (In-Stock)

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Vyrian

USA . 1,702 parts In-Stock

1+ parts

$1.240

100+ parts

-

1k+ parts

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10k+ parts

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1,702

$1.240

-

-

-

Digiode

USA . 774 parts In-Stock

1+ parts

$1.254

100+ parts

-

1k+ parts

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10k+ parts

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774

$1.254

-

-

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Flip Electronics

USA . 24,000 parts In-Stock

1+ parts

-

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24,000

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Chip Stock

USA . 7,500 parts In-Stock

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7,500

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Sensible Micro Corp

USA . 207 parts In-Stock

1+ parts

-

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207

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Distributors (Availability)

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Ampacity Inc.

Singapore . 335,828 parts In-Stock

1+ parts

$0.960

100+ parts

-

1k+ parts

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10k+ parts

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335,828

$0.960

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-

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Corphita

USA . 1,779 parts In-Stock

1+ parts

$1.188

100+ parts

-

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10k+ parts

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1,779

$1.188

-

-

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Corohmni

South Africa . 60 parts In-Stock

1+ parts

$1.240

100+ parts

-

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60

$1.240

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Component Stockers USA

USA . 1,108,737 parts In-Stock

1+ parts

$1.360

100+ parts

$1.280

1k+ parts

$1.150

10k+ parts

$1.150

1,108,737

$1.360

$1.280

$1.150

$1.150

Kulean Microsystems

USA . 7,187 parts In-Stock

1+ parts

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7,187

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Kepictronics

USA . 5,575 parts In-Stock

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5,575

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Assy Fe

Spain . 5,472 parts In-Stock

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5,472

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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SupplyDigital Components

Austria . 4,605 parts In-Stock

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4,605

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Formix International (Excess)

India . 3,147 parts In-Stock

1+ parts

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3,147

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TANS Electronics

Latvia . 2,672 parts In-Stock

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2,672

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A-Z Elektronik GmbH

Germany . 1,725 parts In-Stock

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1,725

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Microchip USA

USA . 1,451 parts In-Stock

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1,451

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Futuretech Components

Singapore . 720 parts In-Stock

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720

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Problanco Electronics

Mexico . 708 parts In-Stock

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708

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Perfect Parts

USA . 560 parts In-Stock

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560

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UHIMA Technologies

Türkiye . 243 parts In-Stock

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243

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Overview

Experience unrivaled performance and reliability with the N25S830HAS22IT by Onsemi. As a leading manufacturer in the industry, Onsemi produces top-quality SRAM products that are perfect for a variety of applications. This small outline memory chip offers seamless operation with its synchronous mode and separate input/output type. With a 32Kx8 organization and a clock frequency of up to 20 MHz, this product provides exceptional value and efficiency for your projects. Trust Onsemi to deliver cutting-edge technology and elevate your designs to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the SRAM, ensuring a longer lifespan.

Nominal Supply Voltage / Vsup (V): 3

The 3V nominal supply voltage provides efficient power usage for the SRAM, making it suitable for various electronic devices.

Operating Mode: SYNCHRONOUS

The synchronous operation ensures data transfers are synchronized and efficient, improving overall performance.

Maximum Clock Frequency (fCLK): 20 MHz

The high maximum clock frequency allows for fast data processing and access speeds, ideal for applications requiring quick response times.

Memory Density: 262144 bit

With a high memory density, this SRAM can store a large amount of data in a compact package, making it suitable for memory-intensive applications.

Technical Specifications

SRAM N25S830HAS22IT attributes and parameters. Explore more SRAM devices from Onsemi

Specs

Maximum Clock Frequency (fCLK):

20 MHz

Input/Output Type:

SEPARATE

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.9 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

1, (3 LINE)

No. of Terminals:

8

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Maximum Standby Current:

.000004 Amp

Minimum Standby Voltage:

2.7 V

Sub-Category:

SRAMs

Maximum Supply Current:

10 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.91 mm

Trade Compliance

N25S830HAS22IT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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