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N01L63W2AT25I

Onsemi

N01L63W2AT25I by Onsemi

N01L63W2AT25I by Onsemi is a 64KX16 SRAM with 3V nominal voltage, operating in industrial temperature range. It features 70ns max access time, 3-STATE output characteristics, and common input/output type. Ideal for applications requiring fast and reliable memory storage in compact electronic devices.

Median Price

$1.780

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 943 parts In-Stock

1+ parts

-

100+ parts

$1.530

1k+ parts

$1.370

10k+ parts

$1.290

943

-

$1.530

$1.370

$1.290

DigiKey

USA . 943 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.780

10k+ parts

-

943

-

-

$1.780

-

Verical

USA . 405 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.913

10k+ parts

-

405

-

-

$1.913

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 384 parts In-Stock

1+ parts

$1.624

100+ parts

-

1k+ parts

-

10k+ parts

-

384

$1.624

-

-

-

Vyrian

USA . 5,216 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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5,216

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,157 parts In-Stock

1+ parts

$1.539

100+ parts

-

1k+ parts

-

10k+ parts

-

2,157

$1.539

-

-

-

Corohmni

South Africa . 496 parts In-Stock

1+ parts

$1.710

100+ parts

-

1k+ parts

-

10k+ parts

-

496

$1.710

-

-

-

Component Stockers USA

USA . 370 parts In-Stock

1+ parts

$1.780

100+ parts

$1.670

1k+ parts

-

10k+ parts

-

370

$1.780

$1.670

-

-

TANS Electronics

Latvia . 7,780 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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7,780

-

-

-

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Kulean Microsystems

USA . 7,302 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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7,302

-

-

-

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Problanco Electronics

Mexico . 3,379 parts In-Stock

1+ parts

-

100+ parts

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3,379

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SupplyDigital Components

Austria . 1,135 parts In-Stock

1+ parts

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100+ parts

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1,135

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Microchip USA

USA . 355 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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355

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-

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Continental Prestige Electronics

USA . 270 parts In-Stock

1+ parts

-

100+ parts

$2.080

1k+ parts

-

10k+ parts

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270

-

$2.080

-

-

UHIMA Technologies

Türkiye . 73 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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73

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Overview

Unlock unparalleled performance and reliability with the N01L63W2AT25I by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality SRAM memory solutions that cater to a wide range of applications. From industrial automation to consumer electronics, this product offers seamless functionality and enhanced efficiency. Experience the value and benefits of this cutting-edge technology, providing customers with a competitive edge in their projects. Trust Onsemi for superior quality and innovation that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the components inside.

Surface Mount: YES

Allows for easy and convenient installation onto circuit boards.

Operating Mode: ASYNCHRONOUS

Enables independent operation without the need for a synchronized clock signal.

Nominal Supply Voltage / Vsup (V): 3

Works efficiently at a standard voltage level of 3V.

Power Supplies (V): 3/3.3

Provides flexibility in power input options for compatibility with various systems.

No. of Terminals: 44

Offers multiple connection points for seamless integration with other components.

Memory Density: 1048576 bit

Provides a high-density storage capacity for efficient data storage.

Maximum Access Time: 70 ns

Ensures quick access to stored data for enhanced performance.

Technical Specifications

SRAM N01L63W2AT25I attributes and parameters. Explore more SRAM devices from Onsemi

Specs

Maximum Access Time:

70 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G44

Length:

18.41 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

44

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64KX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP44,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Parallel or Serial:

PARALLEL

Power Supplies (V):

3/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.25 mm

Maximum Standby Current:

.00001 Amp

Minimum Standby Voltage:

1.8 V

Sub-Category:

SRAMs

Maximum Supply Current:

14 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Width:

10.16 mm

Trade Compliance

N01L63W2AT25I Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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