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N01L083WC2AN2-55I

Onsemi

N01L083WC2AN2-55I by Onsemi

N01L083WC2AN2-55I by Onsemi is a 128Kx8 SRAM with 55ns access time, operating at 3.6V max supply voltage. Ideal for industrial applications, it features a small outline package with 32 terminals and operates in asynchronous mode.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

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Bristol Electronics

USA . 1,518 parts In-Stock

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Digiode

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Problanco Electronics

Mexico . 5,495 parts In-Stock

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Authorized Procurement Solutions

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TANS Electronics

Latvia . 3,868 parts In-Stock

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Kulean Microsystems

USA . 3,491 parts In-Stock

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SupplyDigital Components

Austria . 2,597 parts In-Stock

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Assy Fe

Spain . 1,000 parts In-Stock

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Corphita

USA . 964 parts In-Stock

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UHIMA Technologies

Türkiye . 898 parts In-Stock

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Metaverse IC Inc.

Canada . 632 parts In-Stock

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Corohmni

South Africa . 411 parts In-Stock

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Kepictronics

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Overview

Discover the cutting-edge N01L083WC2AN2-55I by Onsemi, a high-quality SRAM designed to exceed your expectations. With a reputation for excellence, Onsemi delivers top-notch products that excel in performance and reliability. Ideal for a wide range of applications, this SRAM offers unparalleled value with its fast access time, low standby current, and industrial-grade temperature range. Experience the benefits of seamless operation and unmatched efficiency with the N01L083WC2AN2-55I, setting new standards in memory technology. Elevate your projects with this exceptional product from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the internal components, ensuring a longer lifespan for the product.

Surface Mount: YES

Allows for easy installation and replacement on circuit boards, saving time and effort during production or maintenance.

Operating Mode: ASYNCHRONOUS

Enables independent operation of the SRAM without the need for synchronization, making it more flexible and efficient.

Nominal Supply Voltage / Vsup (V): 3

Operating at a standard voltage level ensures compatibility with most systems and devices.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, making it suitable for industrial applications where heat resistance is crucial.

Output Characteristics: 3-STATE

Allows for multiple output states, providing flexibility in managing data flow and connections.

Technology: CMOS

Uses CMOS technology for low power consumption and high speed operation, making it energy-efficient and reliable.

Maximum Access Time: 55 ns

Offers fast access time, ensuring quick retrieval and processing of data for efficient performance.

Technical Specifications

SRAM N01L083WC2AN2-55I attributes and parameters. Explore more SRAM devices from Onsemi

Specs

Maximum Access Time:

55 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G32

Length:

11.8 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

32

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP32,.56,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.25 mm

Maximum Standby Current:

.00001 Amp

Minimum Standby Voltage:

1.8 V

Sub-Category:

SRAMs

Maximum Supply Current:

14 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

8 mm

Trade Compliance

N01L083WC2AN2-55I Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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