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N01L1618N1AT2-85I

Onsemi

N01L1618N1AT2-85I by Onsemi

N01L1618N1AT2-85I by Onsemi is a 64KX16 SRAM with 85ns access time, operating at 1.8V. It features a small outline package, suitable for industrial applications requiring fast and reliable memory storage in a compact form factor. With parallel organization and CMOS technology, it offers high performance in temperature ranges from -40 to 85 °C.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 2,215 parts In-Stock

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Digiode

USA . 861 parts In-Stock

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Problanco Electronics

Mexico . 7,173 parts In-Stock

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TANS Electronics

Latvia . 5,921 parts In-Stock

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Kulean Microsystems

USA . 3,372 parts In-Stock

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SupplyDigital Components

Austria . 2,759 parts In-Stock

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UHIMA Technologies

Türkiye . 492 parts In-Stock

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Corohmni

South Africa . 467 parts In-Stock

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Corphita

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Overview

Experience seamless and reliable performance with the N01L1618N1AT2-85I by Onsemi, a top-tier manufacturer known for superior quality products. This Small Outline Low Profile SRAM offers unmatched value with its industrial-grade temperature range and asynchronous operation mode. Ideal for a wide range of applications, this memory IC provides 64Kx16 organization, ensuring efficient data storage and retrieval. Trust Onsemi to deliver cutting-edge technology that meets your needs and exceeds your expectations. Elevate your projects with the N01L1618N1AT2-85I and experience the difference in performance and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material makes the package lightweight and durable, ideal for portable devices.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on PCBs, saving space and reducing assembly time.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent and simultaneous access to different memory locations, improving overall performance.

Nominal Supply Voltage / Vsup (V): 1.8

Low nominal supply voltage of 1.8V leads to lower power consumption, making it energy efficient.

No. of Terminals: 44

The high number of terminals allows for efficient data transfer and connectivity with other components.

Maximum Operating Temperature: 85 °C

High maximum operating temperature of 85 °C ensures reliability and stable performance in various environmental conditions.

Organization: 64KX16

The organization of 64KX16 provides a large storage capacity and efficient data retrieval for high-performance applications.

Minimum Operating Temperature: -40 °C

Wide range of minimum operating temperature (-40 °C) allows for use in extreme cold environments without compromising functionality.

Terminal Position: DUAL

Dual terminal position enhances connectivity and improves signal transmission, reducing data latency.

Width: 10.16 mm

Compact width of 10.16mm saves space on the PCB, suitable for designs with limited board space.

Maximum Access Time: 85 ns

Fast maximum access time of 85ns ensures quick data retrieval and efficient performance, ideal for high-speed applications.

Technical Specifications

SRAM N01L1618N1AT2-85I attributes and parameters. Explore more SRAM devices from Onsemi

Specs

Maximum Access Time:

85 ns

JESD-30 Code:

R-PDSO-G44

Length:

18.41 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

44

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64KX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1.25 mm

Maximum Supply Voltage (Vsup):

2.2 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

10.16 mm

Trade Compliance

N01L1618N1AT2-85I Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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