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N01L163WC2AB-55I

Onsemi

N01L163WC2AB-55I by Onsemi

N01L163WC2AB-55I by Onsemi is a 64KX16 SRAM with 55 ns access time, operating at 3V. It features a low profile grid array package and CMOS technology, suitable for industrial applications requiring fast and reliable memory storage.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,286 parts In-Stock

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Digiode

USA . 2,206 parts In-Stock

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Problanco Electronics

Mexico . 7,556 parts In-Stock

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TANS Electronics

Latvia . 7,214 parts In-Stock

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Kulean Microsystems

USA . 5,888 parts In-Stock

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SupplyDigital Components

Austria . 5,882 parts In-Stock

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Corphita

USA . 499 parts In-Stock

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UHIMA Technologies

Türkiye . 343 parts In-Stock

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Corohmni

South Africa . 52 parts In-Stock

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Overview

Experience unparalleled speed and reliability with the N01L163WC2AB-55I by Onsemi. As a leader in the industry, Onsemi delivers top-notch quality and performance in every product they create. This SRAM memory module is perfect for a wide range of applications, from industrial automation to consumer electronics. With a 64Kx16 organization and a lightning-fast 55 ns maximum access time, this memory module offers exceptional value and benefits to customers looking for superior performance and efficiency. Choose Onsemi for cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic and epoxy material provides durability and protection for the internal components of the SRAM chip.

Surface Mount: YES

Surface mount technology makes it easier to integrate the SRAM chip into electronic devices, saving space and making assembly more efficient.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexible and independent access to data stored in the SRAM chip, enhancing overall performance.

Nominal Supply Voltage / Vsup (V): 3

Operating at a nominal supply voltage of 3V ensures compatibility with a wide range of electronic systems.

Organization: 64KX16

With an organization of 64Kx16, this SRAM chip offers a high memory capacity which is ideal for data storage and retrieval applications.

Maximum Operating Temperature: 85 °C

Having a maximum operating temperature of 85 °C ensures reliable performance even in high temperature environments.

Technology: CMOS

CMOS technology enables low power consumption and high speed operation, making this SRAM chip energy efficient and fast.

Maximum Access Time: 55 ns

With a maximum access time of 55 ns, this SRAM chip provides quick access to stored data, contributing to overall system performance.

Technical Specifications

SRAM N01L163WC2AB-55I attributes and parameters. Explore more SRAM devices from Onsemi

Specs

Maximum Access Time:

55 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PBGA-B48

JESD-609 Code:

e0

Length:

8 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

48

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64KX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA48,6X8,30

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Power Supplies (V):

3/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.34 mm

Maximum Standby Current:

.00001 Amp

Minimum Standby Voltage:

1.8 V

Sub-Category:

SRAMs

Maximum Supply Current:

14 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Width:

6 mm

Trade Compliance

N01L163WC2AB-55I Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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