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N01L083WC2AN2-70I

Onsemi

N01L083WC2AN2-70I by Onsemi

N01L083WC2AN2-70I by Onsemi is a 128KX8 SRAM with 3.6V max supply voltage, 70ns access time, and 1048576 bit memory density. It is ideal for industrial applications requiring fast and reliable data storage in a compact package with low power consumption.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,468 parts In-Stock

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Digiode

USA . 2,385 parts In-Stock

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Kulean Microsystems

USA . 6,007 parts In-Stock

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TANS Electronics

Latvia . 4,947 parts In-Stock

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Problanco Electronics

Mexico . 1,776 parts In-Stock

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Corohmni

South Africa . 498 parts In-Stock

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SupplyDigital Components

Austria . 246 parts In-Stock

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UHIMA Technologies

Türkiye . 96 parts In-Stock

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Corphita

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Overview

Unlock the power of high-quality SRAM technology with the N01L083WC2AN2-70I by Onsemi. Designed for industrial applications, this memory IC offers unparalleled performance and reliability. With a memory density of 1048576 bits and a maximum access time of 70 ns, this product is perfect for demanding tasks in the field. Trust in Onsemi's expertise in semiconductor manufacturing to provide you with a cutting-edge solution that delivers exceptional value and efficiency. Experience seamless operation and enhanced productivity with the N01L083WC2AN2-70I.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and lightweight, making the product easy to handle and suitable for various applications.

Surface Mount: YES

Surface mount technology allows for easy installation on PCBs, saving space and reducing assembly time.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent access to data without the need for a clock signal, providing flexibility in data retrieval.

Nominal Supply Voltage / Vsup (V): 3

A nominal supply voltage of 3V ensures compatibility with standard power sources, making it easy to integrate into existing systems.

Temperature Grade: INDUSTRIAL

Designed to operate efficiently within industrial temperature ranges, making it suitable for rugged environments and industrial applications.

Memory IC Type: STANDARD SRAM

Being a standard SRAM memory IC, it offers reliable and fast data access, making it suitable for high-performance computing applications.

Technical Specifications

SRAM N01L083WC2AN2-70I attributes and parameters. Explore more SRAM devices from Onsemi

Specs

Maximum Access Time:

70 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G32

Length:

11.8 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

32

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP32,.56,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.25 mm

Maximum Standby Current:

.00001 Amp

Minimum Standby Voltage:

1.8 V

Sub-Category:

SRAMs

Maximum Supply Current:

14 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

8 mm

Trade Compliance

N01L083WC2AN2-70I Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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