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N01L163WC2AB2-70I

Onsemi

N01L163WC2AB2-70I by Onsemi

N01L163WC2AB2-70I by Onsemi is a 64Kx16 STANDARD SRAM with 70 ns access time, operating at -40 to 85 °C. It features 3-STATE output, 2.5/3.3 V power supplies, and 0.75 mm terminal pitch. Ideal for industrial applications requiring fast parallel memory operations in a compact GRID ARRAY package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,234 parts In-Stock

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Digiode

USA . 497 parts In-Stock

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TANS Electronics

Latvia . 5,926 parts In-Stock

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Problanco Electronics

Mexico . 4,657 parts In-Stock

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Kulean Microsystems

USA . 3,507 parts In-Stock

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Corphita

USA . 2,123 parts In-Stock

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SupplyDigital Components

Austria . 391 parts In-Stock

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UHIMA Technologies

Türkiye . 155 parts In-Stock

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Corohmni

South Africa . 113 parts In-Stock

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Overview

Enhance your electronic projects with the N01L163WC2AB2-70I by Onsemi, a top-quality SRAM memory chip designed to meet your performance needs. With Onsemi's reputation for excellence in semiconductor manufacturing, you can trust in the reliability and durability of this product. Whether you're working on consumer electronics, industrial automation, or telecommunications equipment, this memory chip offers fast access times and low power consumption, making it an ideal choice for a wide range of applications. Elevate your designs with the value and benefits that the N01L163WC2AB2-70I brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable for easy handling and long-lasting performance.

Surface Mount: YES

Being surface mountable allows for easy and efficient installation on circuit boards, saving time during assembly.

Operating Mode: ASYNCHRONOUS

Asynchronous operation provides flexibility and versatility in timing and communication, enhancing the overall functionality of the product.

Nominal Supply Voltage: 3V

The 3V supply voltage ensures compatibility with various systems and devices, making it a versatile choice for a wide range of applications.

No. of Terminals: 48

Having 48 terminals allows for efficient connectivity and communication within the circuit, improving overall performance and reliability.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85 °C ensures reliability even in demanding industrial environments.

Memory Width: 16

With a memory width of 16, the product can handle larger data sizes efficiently, making it suitable for applications that require high-speed data processing.

Technology: CMOS

The use of CMOS technology provides low power consumption and high noise immunity, making the product energy-efficient and reliable in performance.

Technical Specifications

SRAM N01L163WC2AB2-70I attributes and parameters. Explore more SRAM devices from Onsemi

Specs

Maximum Access Time:

70 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PBGA-B48

JESD-609 Code:

e1

Length:

8 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

48

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64KX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA48,6X8,30

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Power Supplies (V):

2.5/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.34 mm

Maximum Standby Current:

.00001 Amp

Minimum Standby Voltage:

1.8 V

Sub-Category:

SRAMs

Maximum Supply Current:

14 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Width:

6 mm

Trade Compliance

N01L163WC2AB2-70I Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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