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N01L083WC2AT-55I

Onsemi

N01L083WC2AT-55I by Onsemi

N01L083WC2AT-55I by Onsemi is a 128Kx8 SRAM with 3.6V max supply voltage, 55ns access time, and 1048576-bit memory density. It is ideal for industrial applications requiring fast and reliable data storage in a compact thin profile package.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

USA . 1,606 parts In-Stock

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Vyrian

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Prism Electronics

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TANS Electronics

Latvia . 8,301 parts In-Stock

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Problanco Electronics

Mexico . 3,279 parts In-Stock

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SupplyDigital Components

Austria . 1,810 parts In-Stock

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Corphita

USA . 1,009 parts In-Stock

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Kulean Microsystems

USA . 848 parts In-Stock

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Corohmni

South Africa . 338 parts In-Stock

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UHIMA Technologies

Türkiye . 162 parts In-Stock

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Overview

Upgrade your electronics with the N01L083WC2AT-55I by Onsemi, a top-tier SRAM memory chip that promises superior performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this memory chip is perfect for various applications, ensuring seamless operation and efficient data storage. With a nominal supply voltage of 3V and maximum operating temperature of 85 °C, this memory chip offers exceptional value and benefits to customers looking for high-quality memory solutions. Experience the difference with Onsemi's N01L083WC2AT-55I and take your electronics to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection for the internal components of the SRAM, ensuring its long-term reliability.

Surface Mount: YES

Being surface mount compatible makes the SRAM easy to install on a PCB, saving space and simplifying the manufacturing process.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexible and independent access to memory locations, enhancing overall system performance.

Nominal Supply Voltage / Vsup (V): 3

Operating at a nominal supply voltage of 3V ensures that the SRAM is compatible with a wide range of systems and power sources.

No. of Terminals: 32

Having 32 terminals allows for efficient communication and data transfer between the SRAM and other components in the system.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this SRAM can reliably function in demanding industrial environments.

Memory Density: 1048576 bit

With a high memory density of 1048576 bits, this SRAM can store a large amount of data for efficient processing and fast access times.

Technical Specifications

SRAM N01L083WC2AT-55I attributes and parameters. Explore more SRAM devices from Onsemi

Specs

Maximum Access Time:

55 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G32

JESD-609 Code:

e0

Length:

18.4 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

32

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP32,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Power Supplies (V):

2.5/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.25 mm

Maximum Standby Current:

.00001 Amp

Minimum Standby Voltage:

1.8 V

Sub-Category:

SRAMs

Maximum Supply Current:

14 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

8 mm

Trade Compliance

N01L083WC2AT-55I Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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