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N04L63W1AB27I

Onsemi

N04L63W1AB27I by Onsemi

N04L63W1AB27I by Onsemi is a 256Kx16 SRAM with 3-STATE output, operating at 3V. It features a low profile grid array package and operates in industrial temperature range. Ideal for applications requiring fast access times and high memory density.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,925 parts In-Stock

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Digiode

USA . 2,406 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1,912 parts In-Stock

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Bristol Electronics

USA . 1,912 parts In-Stock

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Dan-Mar Components

USA . 1,912 parts In-Stock

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AZTECH Wire

Italy . 34 parts In-Stock

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$11.250

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Component Stockers USA

USA . 439 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 23,378 parts In-Stock

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Problanco Electronics

Mexico . 5,318 parts In-Stock

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Microchip USA

USA . 5,004 parts In-Stock

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SupplyDigital Components

Austria . 3,855 parts In-Stock

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Kulean Microsystems

USA . 2,611 parts In-Stock

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TANS Electronics

Latvia . 2,339 parts In-Stock

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Corphita

USA . 1,591 parts In-Stock

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UHIMA Technologies

Türkiye . 352 parts In-Stock

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Corohmni

South Africa . 345 parts In-Stock

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Overview

Experience unparalleled performance and reliability with the N04L63W1AB27I by Onsemi. As a leading manufacturer in the industry, Onsemi sets the standard for quality and innovation. This SRAM memory device delivers seamless operation in various applications, from industrial to consumer electronics. With a nominal supply voltage of 3V and low power consumption, the N04L63W1AB27I offers exceptional value and efficiency to customers. Trust Onsemi for cutting-edge technology that meets your needs and exceeds your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability of the product, making it suitable for various applications.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for flexible and independent access to memory locations, improving overall performance.

Nominal Supply Voltage / Vsup (V): 3

The 3V nominal supply voltage ensures compatibility with a wide range of systems, providing stable power delivery.

Organization: 256KX16

The 256KX16 organization offers a high memory capacity and efficient data storage for demanding applications.

Output Characteristics: 3-STATE

The 3-STATE output characteristics allow for tristate logic implementation, enabling multiple devices to share the same data bus.

Technology: CMOS

The CMOS technology used in this product offers low power consumption and high noise immunity, enhancing overall performance and reliability.

Maximum Access Time: 70 ns

The maximum access time of 70 ns ensures fast and efficient data retrieval, making this product ideal for high-speed applications.

Technical Specifications

SRAM N04L63W1AB27I attributes and parameters. Explore more SRAM devices from Onsemi

Specs

Maximum Access Time:

70 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PBGA-B48

Length:

8 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

48

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256KX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA48,6X8,30

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Power Supplies (V):

3/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.34 mm

Maximum Standby Current:

.00001 Amp

Minimum Standby Voltage:

1.8 V

Sub-Category:

SRAMs

Maximum Supply Current:

16 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Width:

6 mm

Trade Compliance

N04L63W1AB27I Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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