Loading...

N01L83W2AT25I

Onsemi

N01L83W2AT25I by Onsemi

N01L83W2AT25I by Onsemi is a 128Kx8 SRAM with 3-STATE output, operating at 3V. It features a small outline package, suitable for industrial applications. With a max access time of 70ns and low standby current, it's ideal for high-speed memory requirements.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,506 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,506

-

-

-

-

Digiode

USA . 1,700 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,700

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 752 parts In-Stock

1+ parts

$9.410

100+ parts

-

1k+ parts

-

10k+ parts

-

752

$9.410

-

-

-

Problanco Electronics

Mexico . 8,058 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,058

-

-

-

-

TANS Electronics

Latvia . 3,351 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,351

-

-

-

-

SupplyDigital Components

Austria . 2,221 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,221

-

-

-

-

Kulean Microsystems

USA . 1,273 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,273

-

-

-

-

Corphita

USA . 743 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

743

-

-

-

-

Microchip USA

USA . 380 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

380

-

-

-

-

Corohmni

South Africa . 311 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

311

-

-

-

-

UHIMA Technologies

Türkiye . 179 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

179

-

-

-

-

Overview

Experience unparalleled speed and reliability with the N01L83W2AT25I by Onsemi, a top-tier manufacturer known for producing high-quality SRAM products. This versatile memory device offers seamless asynchronous operation, common input/output type, and 3-state output characteristics, making it ideal for a wide range of industrial applications. With a compact design and low power consumption, this memory IC provides exceptional value and performance for your projects. Upgrade your systems today with the N01L83W2AT25I and unlock a whole new level of efficiency and productivity.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material ensures durability and protection for the internal components of the SRAM, making it a reliable choice for long-term use.

Surface Mount: YES

Being surface mountable makes it easier to integrate this SRAM into your electronic circuit board, saving space and simplifying assembly.

Operating Mode: ASYNCHRONOUS

The asynchronous operation allows for faster data access and retrieval, enhancing the overall performance of the SRAM.

Nominal Supply Voltage / Vsup (V): 3

Operating at a nominal voltage of 3V offers a balance between power efficiency and performance for various electronic applications.

Memory Density: 1048576 bit

With a high memory density, this SRAM can store a large amount of data efficiently, suitable for applications that require extensive memory storage.

Technical Specifications

SRAM N01L83W2AT25I attributes and parameters. Explore more SRAM devices from Onsemi

Specs

Maximum Access Time:

70 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G32

Length:

18.4 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

32

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP32,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Power Supplies (V):

3/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.25 mm

Maximum Standby Current:

.00001 Amp

Minimum Standby Voltage:

1.8 V

Sub-Category:

SRAMs

Maximum Supply Current:

14 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

8 mm

Trade Compliance

N01L83W2AT25I Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20