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N08L63W2AB27I

Onsemi

N08L63W2AB27I by Onsemi

Onsemi's N08L63W2AB27I is a 512Kx16 SRAM with 3-STATE output, operating at 2.5/3.3V. It features a thin profile grid array package suitable for industrial applications requiring fast access times of 85ns and low standby current of 0.00001Amp.

Median Price

$6.401

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 11,264 parts In-Stock

1+ parts

-

100+ parts

$5.690

1k+ parts

$5.090

10k+ parts

$4.790

11,264

-

$5.690

$5.090

$4.790

Verical

USA . 2,929 parts In-Stock

1+ parts

-

100+ parts

$7.112

1k+ parts

$6.362

10k+ parts

-

2,929

-

$7.112

$6.362

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,476 parts In-Stock

1+ parts

$6.023

100+ parts

-

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-

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1,476

$6.023

-

-

-

Vyrian

USA . 7,664 parts In-Stock

1+ parts

-

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7,664

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$4.157

100+ parts

$3.783

1k+ parts

$3.409

10k+ parts

-

100

$4.157

$3.783

$3.409

-

Corohmni

South Africa . 176 parts In-Stock

1+ parts

$5.420

100+ parts

-

1k+ parts

-

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176

$5.420

-

-

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Corphita

USA . 493 parts In-Stock

1+ parts

$5.706

100+ parts

-

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493

$5.706

-

-

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AZTECH Wire

Italy . 165 parts In-Stock

1+ parts

$12.090

100+ parts

-

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-

10k+ parts

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165

$12.090

-

-

-

Continental Prestige Electronics

USA . 11,264 parts In-Stock

1+ parts

-

100+ parts

$7.700

1k+ parts

-

10k+ parts

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11,264

-

$7.700

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TANS Electronics

Latvia . 7,979 parts In-Stock

1+ parts

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7,979

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Kulean Microsystems

USA . 7,727 parts In-Stock

1+ parts

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100+ parts

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7,727

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Problanco Electronics

Mexico . 5,248 parts In-Stock

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5,248

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SupplyDigital Components

Austria . 1,639 parts In-Stock

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1,639

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Microchip USA

USA . 109 parts In-Stock

1+ parts

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109

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UHIMA Technologies

Türkiye . 27 parts In-Stock

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27

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Overview

Unlock the power of reliable data storage with the N08L63W2AB27I by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-quality products that exceed expectations. This SRAM device offers unparalleled performance and versatility, making it ideal for a wide range of applications. With a focus on value and innovation, this product delivers seamless operation and efficiency, providing customers with a competitive edge. Experience the benefits of superior technology with the N08L63W2AB27I by Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection for the SRAM, ensuring a longer lifespan.

Surface Mount: YES

Surface mount capability makes the installation of this SRAM easy and efficient.

Nominal Supply Voltage / Vsup (V): 3

Operating at a nominal supply voltage of 3V ensures compatibility with a wide range of systems.

No. of Terminals: 48

With 48 terminals, this SRAM offers versatile connectivity options for different configurations.

Maximum Operating Temperature: 85 °C

Capable of operating at high temperatures up to 85 °C, making it suitable for industrial environments.

Technology: CMOS

CMOS technology provides low power consumption and high noise immunity, enhancing the performance of the SRAM.

Memory Density: 8388608 bit

High memory density allows for storing a large amount of data, making it ideal for applications requiring extensive memory storage.

Maximum Access Time: 85 ns

Fast access time of 85 ns ensures quick data retrieval, improving overall system efficiency.

Technical Specifications

SRAM N08L63W2AB27I attributes and parameters. Explore more SRAM devices from Onsemi

Specs

Maximum Access Time:

85 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PBGA-B48

Length:

10 mm

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

48

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA48,6X8,30

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Power Supplies (V):

2.5/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.00001 Amp

Minimum Standby Voltage:

1.8 V

Sub-Category:

SRAMs

Maximum Supply Current:

15 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

N08L63W2AB27I Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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