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N08L163WC2AB-85I

Onsemi

N08L163WC2AB-85I by Onsemi

N08L163WC2AB-85I by Onsemi is a 512Kx16 SRAM with 3.6V max supply voltage, 85ns access time, and operates in industrial temperature range. It is used for parallel data processing applications requiring fast memory access and low standby current consumption.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 2,473 parts In-Stock

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Digiode

USA . 621 parts In-Stock

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TANS Electronics

Latvia . 5,715 parts In-Stock

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Kulean Microsystems

USA . 5,644 parts In-Stock

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SupplyDigital Components

Austria . 4,200 parts In-Stock

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Problanco Electronics

Mexico . 1,492 parts In-Stock

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UHIMA Technologies

Türkiye . 358 parts In-Stock

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Corohmni

South Africa . 263 parts In-Stock

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Corphita

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Overview

Enhance your electronic designs with the N08L163WC2AB-85I by Onsemi, a top-quality SRAM memory chip that offers reliable performance and versatility. Manufactured by Onsemi, a trusted name in the industry, this memory chip is perfect for a wide range of applications. Boasting a robust package body material and a sleek rectangular shape, this chip operates asynchronously and delivers a common input/output type. With a nominal supply voltage of 3V and power supplies of 2.5/3.3V, it provides customers with seamless integration and efficient operation. Upgrade your projects with the N08L163WC2AB-85I and experience the benefits of cutting-edge technology at your fingertips.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the SRAM, ensuring long-term reliability.

Surface Mount: YES

Allows for easy and efficient installation on PCBs, saving time and effort during manufacturing.

Operating Mode: ASYNCHRONOUS

Enables independent operation of the SRAM without the need for external synchronization signals, increasing flexibility in usage.

Nominal Supply Voltage / Vsup (V): 3

Suitable voltage level for stable and reliable operation of the SRAM within specified parameters.

Maximum Operating Temperature: 85 °C

Allows the SRAM to function effectively in a wide range of environmental conditions, ensuring performance in industrial settings.

Technology: CMOS

Utilizes low power consumption and high noise immunity, making the SRAM energy-efficient and reliable.

Maximum Access Time: 85 ns

Provides fast access to data stored in the SRAM, enhancing overall system performance.

Technical Specifications

SRAM N08L163WC2AB-85I attributes and parameters. Explore more SRAM devices from Onsemi

Specs

Maximum Access Time:

85 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PBGA-B48

JESD-609 Code:

e0

Length:

10 mm

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

48

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA48,6X8,30

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Power Supplies (V):

2.5/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.00001 Amp

Minimum Standby Voltage:

1.8 V

Sub-Category:

SRAMs

Maximum Supply Current:

15 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

N08L163WC2AB-85I Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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