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N08L6182AB7IT

Onsemi

N08L6182AB7IT by Onsemi

N08L6182AB7IT by Onsemi is a 512Kx16 SRAM with 3-STATE output, operating at 1.8V and -40 to 85 °C. It features a GRID ARRAY package style, suitable for industrial applications requiring fast access times and low standby current. With a thin profile and fine pitch, it offers high memory density in a compact form factor.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,935 parts In-Stock

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Digiode

USA . 447 parts In-Stock

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447

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Problanco Electronics

Mexico . 8,346 parts In-Stock

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8,346

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TANS Electronics

Latvia . 4,812 parts In-Stock

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Corphita

USA . 2,350 parts In-Stock

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SupplyDigital Components

Austria . 1,669 parts In-Stock

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Corohmni

South Africa . 375 parts In-Stock

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UHIMA Technologies

Türkiye . 301 parts In-Stock

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Kulean Microsystems

USA . 264 parts In-Stock

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Overview

Enhance your products with the N08L6182AB7IT by Onsemi, a top-quality SRAM that offers unmatched performance and reliability. Manufactured by Onsemi, a leader in semiconductor innovation, this SRAM is perfect for a wide range of applications. With its common input/output type and 3-STATE output characteristics, this SRAM provides exceptional value and benefits to customers. Its compact design, low power consumption, and industrial temperature grade make it ideal for demanding industrial environments. Upgrade your devices today with the N08L6182AB7IT by Onsemi and experience the difference in quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material offers durability and protection for the SRAM chip, ensuring it can withstand various environmental conditions.

Surface Mount: YES

SRAM with surface mount capability can easily be mounted on PCBs, saving space and simplifying the assembly process.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for faster access times and flexibility in data retrieval, making the SRAM efficient for a wide range of applications.

Nominal Supply Voltage / Vsup (V): 1.8

Operating at a low nominal supply voltage of 1.8V, this SRAM chip consumes less power and is suitable for battery-powered devices.

Memory Width: 16

With a memory width of 16 bits, this SRAM chip can handle larger chunks of data efficiently, making it ideal for high-performance applications.

Maximum Operating Temperature: 85 °C

Being able to operate at high temperatures of up to 85 °C, this SRAM chip is suitable for industrial-grade applications that require reliability in harsh environments.

Technical Specifications

SRAM N08L6182AB7IT attributes and parameters. Explore more SRAM devices from Onsemi

Specs

Maximum Access Time:

85 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PBGA-B48

Length:

10 mm

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

48

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA48,6X8,30

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Power Supplies (V):

1.8/2

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.00001 Amp

Minimum Standby Voltage:

1.2 V

Sub-Category:

SRAMs

Maximum Supply Current:

14 mA

Maximum Supply Voltage (Vsup):

2.2 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

N08L6182AB7IT Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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