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N08L163WC2AB2-70I

Onsemi

N08L163WC2AB2-70I by Onsemi

N08L163WC2AB2-70I by Onsemi is a 512KX16 SRAM with 70 ns access time, operating at 3V. It features a thin profile grid array package and operates in industrial temperature range. Ideal for applications requiring fast and reliable memory storage in harsh environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

USA . 2,298 parts In-Stock

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Vyrian

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ComSIT Distribution GmbH

Germany . 300 parts In-Stock

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TANS Electronics

Latvia . 7,512 parts In-Stock

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SupplyDigital Components

Austria . 5,768 parts In-Stock

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Authorized Procurement Solutions

USA . 3,500 parts In-Stock

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Kepictronics

USA . 3,500 parts In-Stock

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Corphita

USA . 1,769 parts In-Stock

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Kulean Microsystems

USA . 1,518 parts In-Stock

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UHIMA Technologies

Türkiye . 423 parts In-Stock

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Corohmni

South Africa . 304 parts In-Stock

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Problanco Electronics

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Overview

Enhance the performance of your electronic devices with the N08L163WC2AB2-70I from Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality SRAM products that are ideal for a wide range of applications. With its advanced technology and reliable operation, this memory IC ensures seamless functionality and improved efficiency. Experience the value and benefits of this product, from its common input/output type to its 3-STATE output characteristics. Upgrade your systems today with the N08L163WC2AB2-70I and enjoy the advantages it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material makes the product lightweight and durable, which is ideal for portable devices.

Surface Mount: YES

The surface mount feature allows for easy and convenient installation on circuit boards, saving time and effort in the assembly process.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode provides flexibility in data transfer without the need for synchronization, making it suitable for applications with varying data access patterns.

Nominal Supply Voltage / Vsup (V): 3

The nominal supply voltage of 3V ensures compatibility with a wide range of systems and devices, offering versatility in product integration.

Power Supplies (V): 3/3.3

The dual power supply options of 3V and 3.3V allow for compatibility with different power systems, offering flexibility in design and implementation.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

The grid array, thin profile, and fine pitch package style maximize space efficiency on the circuit board, making it a compact and cost-effective solution.

Memory Density: 8388608 bit

The high memory density of 8388608 bits ensures ample storage capacity for data-intensive applications, enabling efficient data handling and processing.

Maximum Access Time: 70 ns

The maximum access time of 70 ns provides quick data retrieval and processing, enhancing overall system performance and responsiveness.

Technical Specifications

SRAM N08L163WC2AB2-70I attributes and parameters. Explore more SRAM devices from Onsemi

Specs

Maximum Access Time:

70 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PBGA-B48

JESD-609 Code:

e1

Length:

10 mm

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

48

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA48,6X8,30

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Power Supplies (V):

3/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.00001 Amp

Minimum Standby Voltage:

1.8 V

Sub-Category:

SRAMs

Maximum Supply Current:

15 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

N08L163WC2AB2-70I Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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