Loading...

N08L1618C2AB-85I

Onsemi

N08L1618C2AB-85I by Onsemi

N08L1618C2AB-85I by Onsemi is a 512KX16 SRAM with 1.8V supply, operating at -40 to 85 °C. It features a thin profile grid array package and offers 85ns access time. Ideal for industrial applications requiring fast and reliable memory storage solutions.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,428 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,428

-

-

-

-

Vyrian

USA . 1,338 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,338

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Problanco Electronics

Mexico . 8,017 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,017

-

-

-

-

Kulean Microsystems

USA . 7,163 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,163

-

-

-

-

TANS Electronics

Latvia . 4,185 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,185

-

-

-

-

SupplyDigital Components

Austria . 3,335 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,335

-

-

-

-

Corphita

USA . 1,374 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,374

-

-

-

-

UHIMA Technologies

Türkiye . 869 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

869

-

-

-

-

Corohmni

South Africa . 340 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

340

-

-

-

-

Overview

Enhance your electronic projects with the N08L1618C2AB-85I by Onsemi, a top-quality SRAM memory chip that guarantees reliable performance and durability. Manufactured by Onsemi, a trusted name in the industry, this memory chip offers a seamless integration process and versatile applications in various devices. With a nominal supply voltage of 1.8V and a maximum operating temperature of 85 °C, this memory chip provides optimal efficiency while maintaining low power consumption. Experience the benefits of fast access time, high memory density, and innovative technology with the N08L1618C2AB-85I, making it the perfect choice for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material ensures durability and protection of the components inside the package, making it suitable for various environments.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on circuit boards, saving space and simplifying the assembly process.

Operating Mode: ASYNCHRONOUS

Asynchronous operation ensures flexibility and compatibility with various systems, allowing for independent read and write operations.

Nominal Supply Voltage / Vsup (V): 1.8

Operates at a low nominal supply voltage of 1.8V, reducing power consumption and heat generation, ideal for battery-powered devices.

No. of Terminals: 42

The 42 terminals provide multiple connection points for seamless integration with other components, enhancing the overall functionality of the product.

Maximum Operating Temperature: 85 °C

Operates efficiently at a maximum temperature of 85 °C, ensuring reliability and performance in various operating conditions.

Memory Density: 8388608 bit

High memory density of 8388608 bits provides ample storage capacity for large volumes of data, making it suitable for demanding applications.

Maximum Access Time: 85 ns

Fast maximum access time of 85 nanoseconds allows for quick data retrieval and processing, enhancing overall system performance.

Technical Specifications

SRAM N08L1618C2AB-85I attributes and parameters. Explore more SRAM devices from Onsemi

Specs

Maximum Access Time:

85 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PBGA-B42

JESD-609 Code:

e0

Length:

10 mm

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

42

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA48,6X8,30

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Power Supplies (V):

1.8/2

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.00001 Amp

Minimum Standby Voltage:

1.2 V

Sub-Category:

SRAMs

Maximum Supply Current:

14 mA

Maximum Supply Voltage (Vsup):

2.2 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

N08L1618C2AB-85I Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20