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N04L63W2AB27I

Onsemi

N04L63W2AB27I by Onsemi

N04L63W2AB27I by Onsemi is a 256Kx16 SRAM with 3-STATE output, operating at 3V. It features a low profile grid array package and operates in industrial temperature range. Ideal for applications requiring fast access times and high memory density.

Median Price

$4.060

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 340 parts In-Stock

1+ parts

-

100+ parts

$3.510

1k+ parts

$3.140

10k+ parts

$2.950

340

-

$3.510

$3.140

$2.950

DigiKey

USA . 340 parts In-Stock

1+ parts

-

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$4.060

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340

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$4.060

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Verical

USA . 340 parts In-Stock

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-

100+ parts

$4.388

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340

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$4.388

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 179 parts In-Stock

1+ parts

$3.705

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179

$3.705

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Vyrian

USA . 2,971 parts In-Stock

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2,971

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DigiKey Marketplace

USA . 410 parts In-Stock

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410

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Distributors (Availability)

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Corphita

USA . 1,741 parts In-Stock

1+ parts

$3.510

100+ parts

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1,741

$3.510

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Corohmni

South Africa . 77 parts In-Stock

1+ parts

$3.900

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77

$3.900

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Problanco Electronics

Mexico . 6,223 parts In-Stock

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6,223

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SupplyDigital Components

Austria . 871 parts In-Stock

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871

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UHIMA Technologies

Türkiye . 869 parts In-Stock

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869

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Kulean Microsystems

USA . 560 parts In-Stock

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560

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Microchip USA

USA . 341 parts In-Stock

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341

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TANS Electronics

Latvia . 281 parts In-Stock

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Continental Prestige Electronics

USA . 100 parts In-Stock

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$4.750

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100

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Perfect Parts

USA . 1 parts In-Stock

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Overview

Elevate your electronics with the N04L63W2AB27I by Onsemi, a top-of-the-line SRAM memory chip that promises unparalleled quality and performance. Designed by the trusted manufacturer Onsemi, this versatile chip is perfect for a wide range of applications, from industrial machinery to consumer electronics. With its advanced technology and reliable operation, this chip offers customers a seamless experience and peace of mind. Upgrade your devices with the N04L63W2AB27I and enjoy the benefits of superior memory storage and efficient data processing.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material ensures durability and reliability of the product, making it a good choice for long-term use.

Surface Mount: YES

Surface mount design allows for easy installation and integration into various electronic devices, making it convenient to use.

Nominal Supply Voltage / Vsup (V): 3

Nominal supply voltage of 3V is common in many electronic systems, ensuring compatibility with a wide range of applications.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

Grid array, low profile, fine pitch package style allows for efficient use of space and easy placement on PCBs, making it suitable for compact designs.

Maximum Operating Temperature: 85 °C

High maximum operating temperature of 85°C ensures stable performance even in demanding conditions, enhancing the product's reliability.

Parallel or Serial: PARALLEL

Parallel interface allows for high-speed data transfer and efficient processing, making it a preferred choice for applications requiring quick access to memory.

Maximum Access Time: 70 ns

Fast maximum access time of 70 nanoseconds ensures quick retrieval of data, leading to improved overall performance of the product.

Technical Specifications

SRAM N04L63W2AB27I attributes and parameters. Explore more SRAM devices from Onsemi

Specs

Maximum Access Time:

70 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PBGA-B48

Length:

8 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

48

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256KX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA48,6X8,30

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Power Supplies (V):

3/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.34 mm

Maximum Standby Current:

.00001 Amp

Minimum Standby Voltage:

1.8 V

Sub-Category:

SRAMs

Maximum Supply Current:

16 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Width:

6 mm

Trade Compliance

N04L63W2AB27I Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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